4H-N 8inch Semiconductor Substrate SIC Silicon Carbide Wafer For Solar Photovoltaic
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4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device,4H-N 4inch 6inch Sic Wafers Semiconductor High Crystal Quality For Demanding Power Electronics, 4H-N 8inch TANKBLUE Brand Semiconductor Substrate SIC Silicon Carbide Wafer For ......
SHANGHAI FAMOUS TRADE CO.,LTD
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Multifunctional Silicon Carbide Semiconductor High Power Transistor SiC MOS
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Durable Silicon Carbide Semiconductor High Power Transistor SiC MOS Multifunctional *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, ......
Guangdong Lingxun Microelectronics Co., Ltd
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Through Hole IMZ120R090M1H N-Channel Discrete Semiconductor Transistors
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... MOSFET Transistors. Specification Of IMZ120R090M1H Part Number IMZ120R090M1H Product Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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IRFB4110PBF Discrete Semiconductors Transistors For Circuit Protection
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Product Range Field Effect Transistor Semiconductors Discrete Semiconductors Transistors MOSFET IRFB4110PBF MOSFET MOSFT 100V 180A 4.5mOhm 150nC TO-220-3 N-Channel App Characteristics Features High Efficiency ......
KZ TECHNOLOGY (HONGKONG) LIMITED
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DTC123YUA ROHM Semiconductor Transistors Digital BJT NPN 50V 100mA 200mW
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...Semiconductor Transistors Digital BJT NPN 50V 100mA 200mW 3-Pin DTC123YUAT106 DTC123YUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70 Related product number: Mfr Part # Description Package DTC123EM3T5G TRANS PREBIAS NPN 50V SOT723 SOT-723 DTC123JET1G TRANS PREBIAS NPN 50V 100MA SC75 SC-75, SOT-416 DTC123JM3T5G TRANS PREBIAS NPN 50V SOT723 SOT-723 DTC123YCAT116 NPN 100MA 50V DIGITAL TRANSISTOR......
Angel Technology Electronics Co
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TK30E06N1 S1X Discrete Semiconductors Transistor IC Chip MOSFET Through Hole
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...Semiconductors Transistors MOSFET Through Hole . Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor......
Walton Electronics Co., Ltd.
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Silicon Carbide Sintering Furnace for Semiconductor Transistors And MOSFETs
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... semiconductors. They are found in everything from your smartphone or tablet, to even higher power applications such as server farms and solar arrays. More specifically, semiconductors are a key part of the components that make up electronic systems,...
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd
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AO6405 MOSFET Power Electronics P-Channel 30V Surface Mount Discrete Semiconductors Transistors Package 6-TSOP
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AO6405 MOSFET Power Electronics P-Channel 30V Surface Mount Discrete Semiconductors Transistors Package 6-TSOP FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - ......
Shenzhen Sai Collie Technology Co., Ltd.
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New original IC Discrete Semiconductor Transistors - FETs Single MOSFET N-CH 500V 8A TO220AB SiHF840 IRF840PBF
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ShenZhen QingFengYuan Technology Co.,Ltd.
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IS61LV25616AL -10TLI Electronics Components Semiconductor Transistor
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IS61LV25616AL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: — 10, 12 ns • CMOS low power operation • Low stand-by power: — Less than 5 mA (typ.) CMOS stand-by • TTL compatible interface levels • ......
Anterwell Technology Ltd.
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