6inch SiC Epitaxial Wafer Diameter 150mm 4H-N Type 4H-P Type For 5G Communication
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...6inch SiC epitaxial wafer 6inch SiC Epitaxial Wafer Diameter 150mm N type P type for 5G Communication As a core material for silicon carbide (SiC) power device manufacturing, the 6-inch 4H-SiC epitaxial wafer is based on a 4H-N-type SiC substrate, grown......
SHANGHAI FAMOUS TRADE CO.,LTD
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SiC Epitaxial Wafer 4H/6H SiC Substrates Custom Thickness Doping
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SiC Epitaxial Wafer Overview 4-inch (100 mm) SiC Epitaxial Wafers continue to play a vital role in the semiconductor market, serving as a highly mature and reliable platform for power electronics and RF device manufacturers worldwide. The 4” wafer size ......
SHANGHAI FAMOUS TRADE CO.,LTD
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1500C CVD SIC Epitaxy Growth Furnace for Silicon Carbide Growth in 1000*1000*1500mm Effective Space
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... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the...
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd
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LED Substrate Grinding Wheels Metal Bonded Abrasives ISO14001
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...Substrate Application The grinding wheels for LED substrate are mainly used for back thinning of 2”, 4” and 6”LED epitaxial wafers. They can be used steadily on the Japanese, Korean and Taiwanese grinders with high performance. Workpiece: sapphire epitaxial wafer, SiC substrate epitaxial wafer, Si substrate epitaxial wafer. Material of workpiece: Synthetic sapphire, SiC......
China Abrasives Industry Hainan Corporation
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers. The major products are 2 inch, 3 inch, 4 inch 6 inch silicon carbide substrate......
Homray Material Technology
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6H Or 4H SiC Substrate, N Type Or Semi-Insulating -Powerway Wafer
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...SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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Garnet mineralogical Magneto-optical substrate with No-doped doping type
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Product Description: The Single Crystal Substrates offered in our product line are an essential component for various applications in the field of magnetic refrigeration, epitaxial film substrates, and substrate materials for YIG. These substrates are ......
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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6A2 Back Grinding Wheel High Efficiency Custom Size Sapphire Epitaxial Wafer
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... selection of back grinding wheels. This particular grinding tool comes in two types: a silicon wafer back grinding wheel and an LED substrate back grinding wheel. Both of them can be used on different grinding machines made in Europe,America,Japan, and...
Zhengzhou Hongtuo Superabrasive Products Co., Ltd.
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Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module
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... that integrates the advanced silicon carbide Power MOSFET technology. This A2U12M12W2-F2 module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on...
ShenZhen Mingjiada Electronics Co.,Ltd.
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Highly Sensitive Piezoelectric Wafer for Industrial Applications single crystal wafer for optical use
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...Wafer is a type of semiconductor material made of sapphire, which has excellent optical, mechanical, and chemical properties. It is commonly used as the epitaxial layer for GaN-based materials and devices, and is also widely applied in other electronic and...
Hangzhou Freqcontrol Electronic Technology Ltd.
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