8inch 6inch 4H-N Type Sic Substrate Wafer Production Grade For Radio Frequency Devices
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4inch 6inch 8inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device, 8inch 6inch 4H-N Type Sic Substrate Wafer Production Grade For Radio Frequency Devices SiC feature SiC (Silicon Carbide) is a compound material consists of silicon (Si) and ......
SHANGHAI FAMOUS TRADE CO.,LTD
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4H N Type SiC Semiconductor Wafer, Production Grade,3”Size
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... generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped ,...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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SiC Epitaxial Wafer 4H/6H SiC Substrates Custom Thickness Doping
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...RF device manufacturers worldwide. The 4” wafer size strikes an excellent balance between performance, availability, and cost-effectiveness—making it the industry’s mainstream choice for mid-to-high volume production. SiC epitaxial wafers consist of...
SHANGHAI FAMOUS TRADE CO.,LTD
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers. The major products......
Homray Material Technology
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1500C CVD SIC Epitaxy Growth Furnace for Silicon Carbide Growth in 1000*1000*1500mm Effective Space
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... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the...
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd
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Silicon Back Grinding Wheels Sapphire Epitaxial Wafer For Simiconductor Field
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..., silicon wafer, gallium arsenide and GaN wafer. This kind of grinding wheel developed in out company can replace foreign products. They can be used steadily on the Japanese, Korean grinders with high performance. Product Description Workpiece processed:...
SIGNI INDUSTRIAL (SHANGHAI) CO., LTD
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500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
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GaAs Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 3" to Ø 4” . With our extensive MOCVD experience , we can grow binary ......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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Diameter 6inch Sapphire Wafer LED Grade Polished Transparent
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Diameter 6inch Sapphire Wafer LED Grade Polished Transparent Product Description: Sapphire Wafer is a high-precision sapphire substrate with superior performance. It is a wafer-shaped sapphire slice with excellent parallelism, clear aperture, bow & warp......
Hangzhou Freqcontrol Electronic Technology Ltd.
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High Purity Silicon Carbide Ceramics SiC Vertical Wafer Boat For Semiconductor Use
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Product Description: One of the key features of this product is its maximum temperature resistance of 1700℃. This makes it an ideal choice for applications that require high-temperature resistance, such as silicon carbide cooling air pipes, silicon carbide......
Wuxi Special Ceramic Electrical Co.,Ltd
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Cookware Aluminum Discs Circle Blank Wafer Marine Grade DC H14
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PRODUCT DESCRIPTION Aluminum circles are widely used in electronics, daily chemicals, medicine, culture, education and automotive parts. Electrical appliances, thermal insulation, machinery manufacturing, automotive, aerospace,military, mold, construction......
HENAN HOBE METAL MATERIALS CO.,LTD.
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