6inch dia150mm SIC Wafer 4H-N Type Sic substrate for MOS device
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4h-n 4inch 6inch dia100mm sic seed wafer 1mm thickness for ingot growth Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut ......
SHANGHAI FAMOUS TRADE CO.,LTD
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4H Silicon Carbide Substrate for Power Electronics, RF Devices & UV Optoelectronics
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...Substrate for Power Electronics, RF Devices & UV Optoelectronics Product Overview The 4H-SiC Substrate is a high-purity, single-crystal silicon carbide material designed for advanced power electronics, RF devices, and optoelectronic applications. Produced through the PVT method and finished with precision CMP polishing, each substrate......
SHANGHAI FAMOUS TRADE CO.,LTD
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6H Or 4H SiC Substrate, N Type Or Semi-Insulating -Powerway Wafer
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...SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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4 inch 4H-SI SiC wafer manufacturer SiC substrate supplier
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...SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device......
Homray Material Technology
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FCBGA/BGA package substrate manufacture
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...substrate,Semi Package,Semiconductors ,Semiconductor,IC package,IC substrate,uMCP,MCP,UFS,CMOS,MEMS,IC assembly,Storage IC substrage;Smart phone -.Lap top (Ultra thin notebook / Tablet PC) -.Portable game device-.Power/Analog IC drive-Control drive IC for portable electronic device;-PDA-Wireless RF......
HongRuiXing (Hubei) Electronics Co.,Ltd.
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SI4010-C2-GSR RF Power Transistor - High Performance And Reliable Power Solution
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...RF Power Transistors Product Description: The SI4010-C2-GSR is a high-performance RF power transistor specifically designed for use in narrow band, high power applications such as cellular, PCS, and 3G infrastructure. The device is manufactured using a special GaN on SiC......
Shenzhen Sai Collie Technology Co., Ltd.
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62mil TLX-6 RF PCB Board
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...RF applications. This material is versatile due to its 2.45 - 2.65 DK range and available thicknesses and copper cladding. It is suitable for low layer count microwave designs. TLX is PTFE based fiberglass laminate, it is ideal for use in radar systems, mobile communications, microwave test equipment, microwave transmission devices and RF components. TLX is a workhorse in the RF microwave substrate......
Bicheng Electronics Technology Co., Ltd
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WL-CT350 2-Layer PCB 40mil substrate built on double sided copper clad laminate using in antenna
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Introducing Our 2-Layer PCB with WL-CT350 Core We are pleased to offer our 2-layer PCB, built on WL-CT350 laminate, a high-performance material designed for high-frequency applications requiring low loss, thermal stability, and cost-effective manufacturing......
Shenzhen Bicheng Electronics Technology Co., Ltd
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Hot Sale Automatic Chemistry Analyzer Portable CE Biochemistry Analyzer For Liver Renal Function Test Medical Analytical Device
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The analyzer applies the principle of photochemistry and is used with Renal Function test strips (RFS-101, UAS-101, CRS-101, URS-101) .The whole blood sample to be tested is added into the sample area of the strip. In the process of rapid infiltration, ......
Shanghai Lina Medical Device Technology Co., Ltd.
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QPA1009 Integrated Circuits ICs 12.7GHz 17W PA PHS 1 Channel
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...RF Amplifier 10.7-12.7 GHz 17W PA PHS Qorvo QPA1009 17W Wideband GaN on SiC Power Amplifier Qorvo QPA1009 17W Wideband GaN on SiC Power Amplifier operates from 10.7GHz to 12.7GHz, delivering 42dBm of saturated output power and 16dB of large signal gain while achieving 33% power-added efficiency. The QPA1009 RF ports have DC blocking capacitors and are matched to 50Ω. The device's RF......
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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