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Silicon Carbide Machining Sic

1-10 Results for

silicon carbide machining sic

from 1714 Products

Fine Powder Silicon Carbide Black Silicon Carbide Grit Sic Powder

China Fine Powder Silicon Carbide Black Silicon Carbide Grit Sic Powder on sale
Fine Powder Silicon Carbide Black Silicon Carbide Grit Sic Powder Fine Powder Silicon Carbide, also known as Black Silicon Carbide Grit or SiC Powder, is a high-performance abrasive material widely used in precision grinding, lapping, and polishing ......
Zhenan Metallurgy Co., Ltd

Address: Huafu Commercial Center, Wenfeng District, Anyang City, Henan Province, China

Clay Bonded Silicon Carbide Brick SiC High Temperature Strength

China Clay Bonded Silicon Carbide Brick SiC High Temperature Strength on sale
... product mainly made of SiC, the silica carbide content is 72%~99%. Generally, the black silica carbide( content above 96%), add binding agent(or non-binding agent), made by the burdening, mixing, molding and burnt. The principal crystalline phase is SiC....
yixing xinwei leeshing refractory materials co.,Ltd

Address: Dingshu, Yixing, Jiangsu Province, PRC

Semi - Insulating Silicon Carbide Substrate , Sic Wafer 4H High Purity

China Semi - Insulating Silicon Carbide Substrate , Sic Wafer 4H High Purity on sale
...Silicon Carbide Substrateshigh purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​ Applications of SiC Crystal Substrates and Wafers Silicon carbide (SiC) crytsals have unique physical and electronic properties. Silicon Carbide......
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

Semi Insulating Silicon Carbide Wafer SiC Substrate Orientation 0001 Bow/Warp ≤50um

China Semi Insulating Silicon Carbide Wafer SiC Substrate Orientation 0001 Bow/Warp ≤50um on sale
... the best price on the market for 2 inch and 3 inch Research grade Silicon Carbide substrate wafers, but also provides innovative solutions for electronic devices with high power and high frequency, light emitting diode (LED). ......
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

HTCVD Silicon Carbide CVD SIC Epitaxy Growth Furnace Multiple Temperature Control Zones

China HTCVD Silicon Carbide CVD SIC Epitaxy Growth Furnace Multiple Temperature Control Zones on sale
HTCVD Silicon Carbide(CVD SIC)epitaxy growth furnace This equipment is used for silicon carbide coating of carbon-based/ceramic-based materia,especially deposition of silicon carbide on the surface of the semiconductor epitaxial susceptor and etching ring......
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd

Address: No.755, Xianyuehuan Rd, Tianyuan District, Zhuzhou, Hunan Province

4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device on sale
... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it...
Shenzhen A.N.G Technology Co., Ltd

Address: Room421, Fuquan Bldg A, Qingquan Road, Longhua District, Shenzhen,China 518109

Dual Silicon Carbide MSC2X30SDA170J SIC Integrated Circuit Chip SOT-227 Diode Arrays

China Dual Silicon Carbide MSC2X30SDA170J SIC Integrated Circuit Chip SOT-227 Diode Arrays on sale
...Silicon Carbide MSC2X30SDA170J SIC Integrated Circuit Chip SOT-227 Diode Arrays​ Product Description Of MSC2X30SDA170J MSC2X30SDA170J is 1700V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD). Specification Of MSC2X30SDA170J Part Number MSC2X30SDA170J Diode Configuration 2 Independent Technology SiC (Silicon Carbide......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

1400C Silicon Carbide Elements SiC Silicon Carbide Rod Heater 220V-600V

China 1400C Silicon Carbide Elements SiC Silicon Carbide Rod Heater 220V-600V on sale
...SiC Heating Elements Advantages of Silicon Carbide Heater 1. The temperature can reach up to 1500 ° C (surface temperature). 2. There are various shapes available, such as rod-shaped, U-shaped, W-shaped, single helix, and double helix, to meet your needs. 3. The size range is relatively large. 4. Generate high heat output per unit surface area. Application of Silicon Carbide......
ZHENGZHOU SONGYU HIGH TEMPERATURE TECHNOLOGY CO.,LTD

Address: Dengfeng City, Zhengzhou City, Henan Province

Silicon Carbide Rod SiC Heater Element Thermocouple Components for Industrial Heating

China Silicon Carbide Rod SiC Heater Element Thermocouple Components for Industrial Heating on sale
Silicon Carbide Rod SiC Heater Element for Industrial Heating 1. Introduction SiC Heater Element is a kind of non-mental high temperature electric heating element.It is made of selected high-purity green silicon carbide as raw material which is made into blank and silicon......
Wuhan Global Metal Engineering Co., Ltd

Address: 2303 Century Square , Zhongnan Road , Wuhan ,China

High Purity Silicon Carbide Ceramics SiC Vertical Wafer Boat For Semiconductor Use

China High Purity Silicon Carbide Ceramics SiC Vertical Wafer Boat For Semiconductor Use on sale
...ideal choice for applications that require high-temperature resistance, such as silicon carbide cooling air pipes, silicon carbide pipes, and silicon carbide spray nozzles. In addition to its high-temperature resistance, this product also has a ......
Wuxi Special Ceramic Electrical Co.,Ltd

Address: No4 Longshan Road,Xinwu District,Wuxi City,Jiangsu Province

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