IMBF170R450M1XTMA1 1700V Trench Type Silicon Carbide MOSFET Transistors TO-263-8
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IMBF170R450M1XTMA1 1700V Trench Type Silicon Carbide MOSFET Transistors TO-263-8 Product Description Of IMBF170R450M1XTMA1 IMBF170R450M1XTMA1 is 1700V CoolSiC™ Trench-type Silicon Carbide MOSFET Transistors in TO-263-7 Package. Specification Of ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Durable Silicon Carbide MOSFET Heat Dissipation For Automotive
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.... These transistors are specially designed for providing high power and high frequency performance. Their main advantages include their reliability and stability, which is based on the national military standard production line. Silicon Carbide MOSFETs are...
Reasunos Semiconductor Technology Co., Ltd.
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Industrial Silicon Carbide MOSFET Multipurpose High Frequency Transistor
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Industrial Silicon Carbide MOSFET Multipurpose High Frequency Transistor *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: ......
Guangdong Lingxun Microelectronics Co., Ltd
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Silicon Carbide Sintering Furnace for Semiconductor Transistors And MOSFETs
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Silicon Carbide as a Semiconductor Semiconductor Transistors And MOSFETs Produced By Silicon Carbide Sintering Furnace Nearly every electronic item you encounter on a day-to-day basis contains semiconductors. They are found in everything from your ......
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ......
Anterwell Technology Ltd.
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp......
Shenzhen Koben Electronics Co., Ltd.
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High Quality Polishing Abrasive Silicon Carbide 98%/97%/95%/88%/85%
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... and thermistors. SiC has flourished in the research of power electronic devices due to its excellent performance and excellent properties of silicon carbide devices. Silicon carbide can not only improve the voltage resistance of the device, but more...
Zhenan Metallurgy Co., Ltd
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IRF3205PBF Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET
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...Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs......
Shenzhen Retechip Electronics Co., Ltd
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Colorless Transparent Silicon Carbide Wafer High Purity Silicon Carbide SiC Wafers Lens
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... 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers About Silicon Carbide (SiC)Crystal Silicon carbide (SiC), also known as...
SHANGHAI FAMOUS TRADE CO.,LTD
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Voltage 20V P Channel SMD Mosfet Transistor IRF7404TRPBF Current 7.7A SOP8 Package
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... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of...
Shenzhen ATFU Electronics Technology ltd
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