Modules MSC130SM120JCU3 Full Silicon Carbide Power Module 1200V 173A N-Channel
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Modules MSC130SM120JCU3 Full Silicon Carbide Power Module 1200V 173A N-Channel Product Description Of MSC130SM120JCU3 MSC130SM120JCU3 is Buck Chopper SiC MOSFET Power Module,1200 V, 173 A full Silicon Carbide power module. Specification Of MSC130SM120JCU3 Part Number MSC130SM120JCU3 FET Type N-Channel Technology SiCFET (Silicon Carbide......
ShenZhen Mingjiada Electronics Co.,Ltd.
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2MBI100SC 120 IGBT Power Module 1200V / 100A High Speed Switching Voltage Drive
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...Power Module 1200V / 100A 2 in one-package 2MBI100SC 120 IGBT Power Module 1200V / 100A High Speed Switching Voltage Drive 1200V / 100A 2 in one-package Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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FZ1800R12HP4 Single Switch IGBT Power Module Infineon Power Module 1200v 1800a
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Infineon Power Module IGBT FZ1800R12HP4 1200v 1800a Single Switch Igbt Module Soft-Switch Applications • HighPowerConverters • MotorDrives • WindTurbines Specifications Parametrics FZ1800R12HP4_B9 Configuration Single switch Dimensions (width) 140 mm ......
Shenzhen Retechip Electronics Co., Ltd
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Industrial Silicon Carbide Power Transistors High Frequency Multipurpose
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...Silicon Carbide MOSFETs, also known as Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) based on Silicon Carbide, are high-power, high-efficiency electronic components used in a wide variety of applications, including Solar Inverters, High-voltage DC/DC Converters, Motor Drivers, UPS Power Supplies, Switching Power Supplies, and Charging Piles. Featuring an N-type silicon carbide......
Reasunos Semiconductor Technology Co., Ltd.
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Multiscene Silicon Carbide Power Mosfet For Switching Power Supply
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... properties such as high thermal conductivity, high breakdown voltage, and low switching losses. The use of silicon carbide material in the MOSFET design allows for better switching performance, higher operating frequencies, and reduced power losses,...
Guangdong Lingxun Microelectronics Co., Ltd
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FS50R12W2T4IGBT Igbt Power Module 1200V 50A IGBT - Inverter Configuration
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FS50R12W2T4IGBT Igbt Power Module 1200V 50A IGBT - Inverter Configuration TypischeAnwendungen TypicalApplications • Klimaanlagen • AirConditioning • Motorantriebe • MotorDrives • Servoumrichter • ServoDrives • USV-Systeme • UPSSystems ......
Shenzhen Hongxinwei Technology Co., Ltd
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Hot selling FF200R12KT3 Power Module 1200V 200A IGBT Module original new chip
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ShenZhen QingFengYuan Technology Co.,Ltd.
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C3M0016120K TO-247-4 Silicon Carbide Power N-type MOSFET Electronic Component Silicon Carbide SIC FET IC Chip
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Shenzhen Anxinruo Technology Co., Ltd.
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Sic 97.8% Ferro black silicon carbide for Coated Abrasives
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...Silicon Carbide / Ferro Silicon Carbide for Coated Abrasives Description: If only silicon carbide chips are counted, silicon carbide has incomparable advantages over traditional silicon-based power chips in terms of power semiconductors: silicon carbide can withstand larger currents and voltages, higher switching speeds, smaller energy losses, and higher temperature resistance. Therefore, the power module made of silicon carbide...
Zhenan Metallurgy Co., Ltd
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STARPOWER IGBT Power Module GD300HFL120C2S 1200V / 300A Molding Type Durable
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STARPOWER IGBT POWER Module GD300HFL120C2S ,1200V /300A Molding Type Module Molding Type Module 1200V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are ......
Hontai Machinery and equipment (HK) Co. ltd
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