SCR Type Double Spiral Silicon Carbide Sic Heater Furnace Heating Element
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Products Description Silicon Carbide Heating Element Silicon carbon rod is a rod-shaped or tubular non-metallic high-temperature electric heating element made from high-purity silicon carbide as the main raw material, processed into blanks according to a ......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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1400C 1500C Industrial Silicon Carbide Sic Heater Heating Element For Furnace And Kilns
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...Silicon Carbide Sic Heater Heating Element For Furnace And Kilns SIC heater silicon carbide heating element is a non-metallic high-temperature electric heating element. It uses selected high-purity green silicon carbide as raw material, and is made into blanks and silicon crystals at a high temperature of 2400℃. It can usually be used in furnaces......
Shaanxi KeGu New Material Technology Co., Ltd
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Long Service Life Silicon Carbide Vacuum Sintering Furnace Designed For SiC
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... exceptional thermal conductivity, resistance to acids, and low thermal expansion. Compound Formula SiC Molecular Weight 40.1 Appearance Black Melting Point 2,730° C (4,946° F) (decomposes) Density 3.0 to 3.2 g/cm3 Electrical Resistivity 1 to 4 10x Ω-m...
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd
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Grade 1600 SiC Element 350MPa-450MPa Silicon Carbide Rod Heater
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...silicon carbide rod The H-shaped silicon heating element is fabricated through the utilization of two meticulously-matched SiC rods and the welding of a thickened silicon carbide bridge. This element allows for the wiring of both tail ends from one side of the furnace......
ZHENGZHOU SONGYU HIGH TEMPERATURE TECHNOLOGY CO.,LTD
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Silicon Carbide Monocrystalline Growth Furnace Resistance Method 6 8 12inch SiC Ingot Growth Furnace
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... proudly introduces its SiC single crystal growth furnace, an advanced solution engineered for high-performance SiC wafer manufacturing. Our furnace efficiently produces SiC single crystals in 6-inch, 8-inch, and 12-inch sizes, meeting the growing needs of...
SHANGHAI FAMOUS TRADE CO.,LTD
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Metallurgical Grade Refractory Silicon Carbide/Sic Powder/Lump 88 90
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...Silicon Carbide/Sic Powder/Lump 88 90 Metallurgical Grade Refractory Silicon Carbide (SiC), available in both powder and lump forms with purity levels of 88% and 90%, is a high-performance material designed for metallurgical, refractory, and abrasive applications. Produced through the carbothermic reduction of silica sand and carbon in electric arc furnaces, this SiC......
Zhenan Metallurgy Co., Ltd
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3inch 4inch 2inch 0.35mm DSP surface 4h-N Silicon Carbide Sic Wafers
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...SiC substrates,Silicon Carbide substrates for semiconductor device, customized thickness 4inch 4H-N silicon carbide crystal sic wafers for 4inch seed crystal grade; 3inch 4inch 4h-n 4h-semi dummy test grade silicon carbide sic wafers Silicon Carbide SiC crystal substrate wafer carborundum SILICON CARBIDE MATERIAL PROPERTIES Product Name: Silicon carbide (SiC......
SHANGHAI FAMOUS TRADE CO.,LTD
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High Strength Refractory Oxide Silicon Carbide SIC Kiln Shelf For Kiln Furniture
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...Silicon carbide kiln shelf Silicon carbide kiln shelf is a combination of high purity silicon carbide and ultrafine powder,through vibration molding,high temperature sintering,with good high temperature thermal conductivity and bearing,applicable for all kinds of architectural ceramics,sanitary ceramics,household ceramics,porcelain refractories,powder metallurgy sintering furnace......
Yixing City Kam Tai Refractories Co.,ltd
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E1012-305 Military Security Bulletproof Plates , boron carbide B4C / Silicon carbide SiC Ceramic Plate
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... Density: 3.13-3.15 g/cm2 Flexural Strength : 423-512 Mpa Hardness: HV2479-3099 Boron carbide materials Boron carbide is smelted from boric acid and powdered carbon in electric furnace under high temperature. Depending on hardness of 4950kgf/mm2, It is...
China Hunan High Broad New Material Co.Ltd
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Stable Converter SiC Power Mosfet , ISO Silicon Carbide SiC Power Semiconductors
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...Silicon Carbide MOSFETs (SiC Metal-Oxide-Semiconductor Field-Effect Transistor) are high-power and high-efficiency devices with a high frequency and low resistance. They are based on the national military standard production line, making the process stable and reliable. Silicon Carbide MOSFETs are composed of a Silicon Carbide......
Reasunos Semiconductor Technology Co., Ltd.
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