SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Manufacturer: POLYFET Product Category: MOSFETs RoHS: Details Technology:- Mounting Style: SMD/SMT Package / Case:- - Transistor Polarity:- - Number of Channels:- - Vds - Drain-Source Breakdown ......
Wisdtech Technology Co.,Limited
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Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar
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Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar 2SD1625 Driver Applications PNP/NPN Epitaxial Planar Silicon Transistors IC Applications Motor drivers, printer hammer drivers, relay dreiver,voltage regulator control Features High ......
Anterwell Technology Ltd.
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RF Power Transistors MRF422 RF POWER TRANSISTORS NPN SILICON MOTOROLA RF Power Transistors
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MRF422 is a RF POWER TRANSISTORS NPN SILICON. Part NO: MRF422 Brand: MOTOROLA Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
Mega Source Elec.Limited
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MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors
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MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−Free) 3,000 / Tape & ......
ChongMing Group (HK) Int'l Co., Ltd
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Electronic Components Rf Power Mosfet Transistors STPS15L30C-TR STS1DNC45 STV6419AG
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Electronic components STPS15L30C-TR STS1DNC45 STV6419AG mosfet advantage price for original stock Feature • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate ......
Shenzhen Weitaixu Capacitor Co.,Ltd
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RF Power Transistor EPM7256AEQC208-10 - High Performance Low Power Consumption
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...-10 RF Power Transistor Product Features: - N-Channel Enhancement Mode - Self-Aligned Silicon Gate - High Performance - Low On-Resistance Technical Specifications: - Maximum Power Dissipation: 2.8W - Maximum Drain Source Voltage: 20V - Maximum Gate Source ......
Shenzhen Sai Collie Technology Co., Ltd.
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
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AP12N10D Power Switch Transistor , Original Silicon Power Transistor
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...Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 5A RDS(ON) < 140mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Integrated Circuit Chip SCTWA60N120G2-4 Silicon carbide Power MOSFET Transistors
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...Silicon carbide Power MOSFET Transistors Product Description Of SCTWA60N120G2-4 SCTWA60N120G2-4 N-Channel Power MOSFET is a very high voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology. Specification Of SCTWA60N120G2-4 Part Number SCTWA60N120G2-4 Vgs - Gate-Source Voltage: - 10 V, + 22 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Harga Transistor Sd1480 Rf Transistor Npn Silicon Rf Power Transistor 28V 20A 125W 175MHz
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SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:......
Shenzhen Kaigeng Technology Co., Ltd.
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