Heat Dissipation High Power MOSFET Silicon Power Transistors
|
...High Power MOSFET Silicon Power Transistors Product Description: One of the most important features of this MOSFET is its high switching speed. This allows it to quickly and efficiently switch power on and off, which is critical in many high-performance applications. Whether you are working with a high-frequency switching power supply or another high-power application, the High Power MOSFET......
Guangdong Lingxun Microelectronics Co., Ltd
|
Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar
|
Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar 2SD1625 Driver Applications PNP/NPN Epitaxial Planar Silicon Transistors IC Applications Motor drivers, printer hammer drivers, relay dreiver,voltage regulator control Features High DC current gain Large curren capacity and wide ASO Very small size making it easy to provide high......
Anterwell Technology Ltd.
|
High Power MOSFET Stable Process voltage DC/DC Converter MOSFET High Power DC/DC Converter voltage Stable Process
|
... based on the national military standard production line, this MOSFET is designed to meet the stringent requirements of military and industrial applications where performance and durability are paramount. As a device type MOSFET, this high power MOSFET is...
Reasunos Semiconductor Technology Co., Ltd.
|
20V Complementary Power High Power MOSFET FDMA1032CZ
|
High Power MOSFET FDMA1032CZ 20V Complementary PowerTrench® MOSFET High Power MOSFET FDMA1032CZ 20V Complementary PowerTrench® MOSFET [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic ......
Sunbeam Electronics (Hong Kong) Limited
|
1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247
|
...MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package. Specification Of SCTWA50N120 Part Number: SCTWA50N120 FET Type: N-Channel Technology: SiCFET (Silicon......
ShenZhen Mingjiada Electronics Co.,Ltd.
|
MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors
|
MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBT4403LT1 SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT4403LT1G SOT−23 (......
ChongMing Group (HK) Int'l Co., Ltd
|
LND150K1-G High Power MOSFET Advanced Power Electronics Applications FETs
|
... superior switching performance and low on-state resistance. It is designed to meet the requirements of high power applications such as DC-DC converters, motor controllers and power management systems. The device features a low-threshold voltage which...
Shenzhen Sai Collie Technology Co., Ltd.
|
F16N65L TO-220F-3L N-CHANNEL High Power MOSFET 16A 650V Applications In Switching Power Supplies And Adaptors
|
... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in...
Shenzhen Hunt Electronics Co., Ltd
|
1200v 50a High Power Mosfet Transistors / Thyristor CLA50E1200HB
|
...HIGH POWER MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor , n channel transistor CLA50E1200HB High......
Shenzhen Huahao Gaosheng Technology Co., Ltd
|
Superfet 3 Audio Power Transistors , 650V NVHL040N65S3F High Power Mosfet Transistors
|
... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is...
Shenzhen Weitaixu Capacitor Co.,Ltd
|
Submit your “silicon high power mosfet” inquiry in a minute :