REACH High Current Power Mosfet , Stable N Channel Metal Oxide Semiconductor
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Product Description: High Power MOSFET is a type of high voltage FET (Field Effect Transistor) with a high power and low on-resistance. It features high efficiency and is suitable for a wide range of applications, such as solar inverter, high-voltage DC/DC......
Reasunos Semiconductor Technology Co., Ltd.
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TO-220F Metal Oxide Semiconductor Field Effect Transistors 15A 600V 274mΩ
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15A 600V 274mΩ TO-220F Metal-Oxide-Semiconductor Field-Effect Transistors N-channel Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=......
Guangdong Lingxun Microelectronics Co., Ltd
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PD57018-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black RF MOSFET Transistors
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Product name:PD57018-E Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage......
Beijing Silk Road Enterprise Management Services Co.,LTD
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Original thyristor mosfet TO-252-3 n-channel 150V 3A metal oxide semiconductor tube IRFR4615TRLPBF
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Shenzhen Anxinruo Technology Co., Ltd.
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Yttrium Oxide Coating Rare Earth Metal Oxides
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yttrium oxide powder Y2O3 99.999 in coatings for semiconductor production technology equipment Yttrium oxide also known as yttria, is Y2O3. It is an air-stable, white solid substance. Yttrium oxide is used as a common starting material for both materials ......
China Hunan High Broad New Material Co.Ltd
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AONR21321 MOSFET Power Electronics P-Channel 30V Discrete Semiconductor Package 8-DFN-EP
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AONR21321 MOSFET Power Electronics P-Channel 30V Discrete Semiconductor Package 8-DFN-EP FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max ......
Shenzhen Sai Collie Technology Co., Ltd.
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Professional TPC8063-H Toshiba Integrated Circuits MOSFET Metal Oxide
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...Semiconductor Inc. Goods situation In stock-can ship immediately Part Number TPC8063-H Package Tape & Reel (TR) Technology MOSFET (Metal Oxide) Product Status Obsolete Description MOSFET N-CH 600V 40MA SOT23-3 Drain to Source Voltage (Vdss) 600 V Detailed Description N-Channel......
ShenZhen QingFengYuan Technology Co.,Ltd.
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IRF7342TRPBF N-Channel MOSFET, 40V Vds, 9.1A Id, Low Rds(on), SOIC-8 SMT, RoHS Compliant, Fast Switching for Power Electronics
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...Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed by Infineon Technologies AG—a global leader in semiconductor......
Berton Electronics Limited
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IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET
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... Hole TO-220AB Specification: Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)...
Guangzhou Topfast Technology Co., Ltd.
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IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET
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...Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max ......
Angel Technology Electronics Co
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