STP65NF06 Power Mosfet Transistor N-channel DPAK/TO-220 Power MOSFET
|
... 60A - DPAK/TO-220 STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD65NF06 60V <14mΩ 60A STP65NF06 60V <14mΩ 60A ■ Standard level gate drive ■ 100% avalanche tested Description This Power MOSFET is the latest development of ......
ChongMing Group (HK) Int'l Co., Ltd
|
IRF740 N - CHANNEL TO-220 Power MOSFET dual power mosfet
|
STOCK List PM200RSA060 120 MITSUBISH 13+ MOUDLE MSM5219BGS-K-7 550 OKI 14+ QFP PS11003-C 500 MITSUBISH 12+ MODULE MB87020PF-G-BND 3531 FUJITSU 14+ QFP MA2820 7689 SHINDENG 16+ ZIP 7MBP150RTB060 210 FUJI 12+ MODULE MBM200HS6B 629 HITACHI 14+ MODULE ......
Anterwell Technology Ltd.
|
High Power MOSFET NVMJS1D4N06CL Power MOSFET 60 V, 1.4Ω, 220 A, Single N-Channel
|
High Power MOSFET NVMJS1D4N06CL Power MOSFET 60 V, 1.4Ω, 220 A, Single N-Channel [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ......
Sunbeam Electronics (Hong Kong) Limited
|
Through Hole N Channel Power Mosfet 55V 49A 94W TO-220 ROHS IRFZ44NPBF IRFZ44N
|
...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs......
Shenzhen Koben Electronics Co., Ltd.
|
STP100N8F6 Audio Power Mosfet N Channel 80 V 0.008 Ohm Type 100 A StripFET F6
|
...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power...
Shenzhen Weitaixu Capacitor Co.,Ltd
|
FDS8447 Power MOSFET High Reliability High-Performance Electronics
|
...power MOSFET designed for high performance power electronics applications. It features a wide range of features such as low on-resistance, high efficiency, and low gate charge for maximum performance. The device is available in both TO-220 and D2PAK packages. Features: - Low On-Resistance - High Efficiency - Low Gate Charge - Available in TO-220......
Shenzhen Sai Collie Technology Co., Ltd.
|
JUYI Tech JY09M N Channel Enhancement MOS IC TO-220 70V90A Power Mosfet
|
... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications....
Shanghai Juyi Electronic Technology Development Co., Ltd
|
High Power MOSFET Stable Process voltage DC/DC Converter MOSFET High Power DC/DC Converter voltage Stable Process
|
... based on the national military standard production line, this MOSFET is designed to meet the stringent requirements of military and industrial applications where performance and durability are paramount. As a device type MOSFET, this high power MOSFET is...
Reasunos Semiconductor Technology Co., Ltd.
|
Industrial High Power MOSFET Heat Dissipation Metal Oxide Mosfet
|
...Power MOSFET Heat Dissipation Metal Oxide Mosfet Product Description: The MOSFET is a type N device and has a gate-source voltage (Vgs) of ±30V, making it perfect for use in high power applications that require reliable and efficient performance. With its high power rating and excellent performance characteristics, the High Power MOSFET......
Guangdong Lingxun Microelectronics Co., Ltd
|
F4N65L TO-220F-3L POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors
|
...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power...
Shenzhen Hunt Electronics Co., Ltd
|
