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to 247ac trench igbt transistor

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IRGP4063 IRGP4063D IRGP4063DPBF Trench IGBT Transistor TO-247AC 96A

China IRGP4063 IRGP4063D IRGP4063DPBF Trench IGBT Transistor TO-247AC 96A on sale
Product Detail Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer Infineon Technologies Series - Packaging Tube Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic......
Shenzhen Quanyuantong Electronics Co., Ltd.

Address: Rm18 B, Block A, Duhui100 Zhonghang Road ,Futian District,Shenzhen China

650V Automobile Chips AFGHL50T65SQDC Field Stop Trench IGBT Transistors TO-247-3

China 650V Automobile Chips AFGHL50T65SQDC Field Stop Trench IGBT Transistors TO-247-3 on sale
... generation high speed IGBT technology. Specification Of AFGHL50T65SQDC Part Number: AFGHL50T65SQDC Current - Collector (Ic) - Max: 80 A Operating Temperature(Min): -55°C (TJ) ......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

1200V 48A 529W IGBT Transistor Module , Trench Field Stop IGBT AFGHL40T120RLD

China 1200V 48A 529W IGBT Transistor Module , Trench Field Stop IGBT AFGHL40T120RLD on sale
...IGBT Trench Field Stop 1200 V 48 A 529 W Through Hole TO-247-3 Product Attribute Attribute Value Select Attribute Manufacturer: onsemi Product Category: IGBT Transistors RoHS: Details Package / Case: TO-247-3 Packaging: Tube Brand: onsemi Product Type: IGBT Transistors Factory Pack Quantity: 30 Subcategory: IGBTs...
HongKong Wei Ya Hua Electronic Technology Co.,Limited

Address: Room 3001-2, Tower A, World Trade Plaza, No. 9 Fuhong Road, Futian District, Shenzhen

Original 3 Pin Transistor FGA25N120ANTD 1200V NPT Trench IGBT

China Original 3 Pin Transistor FGA25N120ANTD 1200V NPT Trench IGBT on sale
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = ......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT

China AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT on sale
...IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT 1.FEATURES Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency • Industry standard TO-247AC package • Lead-Free • Automotive Qualified * 2.BENEFITS Generation 4 IGBT's offer highest efficiency available IGBT......
Shenzhen Hongxinwei Technology Co., Ltd

Address: 3418, Duhuixuan, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China

FGA25N120ANTD​ TO-3P NPT Trench IGBT 25A 1200V

China FGA25N120ANTD​ TO-3P NPT Trench IGBT 25A 1200V on sale
FGA25N120ANTD​ # TO-3P NPT Trench IGBT 25A 1200V Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD

Address: RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA

FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

China FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT on sale
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = ......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

STGW60H65DFB High Speed Igbt 600V 60A Field Stop Trench Igbt

China STGW60H65DFB High Speed Igbt 600V 60A Field Stop Trench Igbt on sale
Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameter ......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

High Frequency Inverters IC Chips IGBT Transistors 650V 80A 375W STGWA60H65DFB

China High Frequency Inverters IC Chips IGBT Transistors 650V 80A 375W STGWA60H65DFB on sale
... - IGBTs - Single Manufacturer STMicroelectronics Series - Packaging Tube Part Status Active IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 80A Current - Collector ......
Shenzhen Weitaixu Capacitor Co.,Ltd

Address: 9E, Block A, Huaqiang Plaza, Huaqiangbei, Futian, Shenzhen, China

IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor

China IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor on sale
...: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers : -...
Angel Technology Electronics Co

Address: FL16 Coastal Buidling East Block Nanshan District Shenzhen China 518000

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