PTB20245 35 Watts, 2.1-2.2 GHz Wide-Band CDMA Power Transistor ERICSSON RF Power Transistors
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... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower ......
Mega Source Elec.Limited
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10 - 13GHz Broadband RF Power Amplifier Hybrid Micro Assembly Process, Wide-Band RF Power Amplifier
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...Band , Low Noise Amplifier , LNA , RF Power Amplifier Module VBE RF Amplifier Module Introductions : VBE Provide solutions of RF module including radio frequency signal source,radio frequency power amplifier(PA),low noise amplifier(LNA), Radio Frequency outdoor unit(ODU) and customized radio frequency module solution,the frequency band cover P-wave band,L-wave band,S-wave band,Ku-wave band and Ka-wave band......
VBE Technology Shenzhen Co., Ltd.
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SI4703-C19-GMR RF Power Transistor - Compact High Efficiency And Reliable Performance
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...RF Power Transistor Product Description: The SI4703-C19-GMR is an advanced RF power transistor designed using a high-voltage BiCMOS process. This device is suitable for high-power, high-efficiency, and low-noise applications in the HF and VHF bands. It features a wide bandwidth, high output power, and low noise figure. The SI4703-C19-GMR is suitable for use in a variety of RF applications including RF amplifiers, RF power...
Shenzhen Sai Collie Technology Co., Ltd.
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
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High Power Linear Amplifier Module Device 500-2700MHz L Band RF Power Amplifier Enhances Signal Strength for Base Stations
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...Power Linear Amplifier Module Device 500-2700MHz L Band RF Power Amplifier Enhances Signal Strength for Base Stations Product Overview This 250W RF power amplifier is designed to operate within the frequency range of 500-2700MHz, providing high-power amplification for a wide......
Nanjing Shinewave Technology Co., Ltd.
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WIFI 5G Wide Band RF 50W Power Amplifier Signal Booster For Anti Drone Solution
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...wide band RF 50W power amplifier signal booster for anti drone solution product Introduction This wide band 50 W power amplifier jammer module is no signal source ,the wide band support customized .The 50w power amplifer weight 709g ,When you testing under 24-28V,the power reach 50W.And this power amplifier has stable band......
Shenzhen TeXin electronic Co., Limited
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50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
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...RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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Wireless Communication Module DW3720TR13 Ultra-Wide Band RF Transceiver IC
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Wireless Communication Module DW3720TR13 Ultra-Wide Band RF Transceiver IC Product Description Of DW3720TR13 DW3720TR13 is a low-power ultra-wide band RF transceiver. Product Photo Of DW3720TR13 Other Supply Product Types Part Number Package ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET
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...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power...
Wisdtech Technology Co.,Limited
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MDmesh DM6 High Voltage Mosfet , Enhancement Rf Power Transistor For LED Lighting
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Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode......
Shenzhen Weitaixu Capacitor Co.,Ltd
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