10 10mm sic silicon carbide wafer

Brand Name:ZMSH

Model Number:4H-P SiC

Place of Origin:CHINA

...-temperature, high-frequency, and high-power electronic devices. 4H-SiC is a type of its crystal structure that has a hexagonal lattice structure. The wide bandgap (approx. 3.26 eV) allows it to operate in high temperature and ...

Brand Name:ZMSH

Model Number:3C-N SiC Wafer

Place of Origin:China

...SiC Silicon Carbide Wafers MPD or Dummy Grade Introduction of 3C SiC Wafer: Compared to 4H-Sic, although the bandgap of cubic silicon carbide (3c Sic, belong to beta Sic) is lower, its carrier mobility, thermal conductivity, and mechanical properties are better than those of 4H-Sic, Moreover, the defect density at the interface between the insulating oxide gate and 3c-sic...

Brand Name:PAM-XIAMEN

Place of Origin:China

...SiC(Silicon Carbide) Wafer, Production Grade,Epi Ready,2”Size PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)waferfor electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC...

Brand Name:ZHENAN

Model Number:Silicon Carbide

Place of Origin:China

...-performance material specifically tailored for foundry applications​​. Produced through the carbothermic reduction of silica and carbon, this SiC variant is valued for its ​​hardness, thermal conductivity, and chemical stability​​, making it

Brand Name:ANG

Model Number:SIC-W05

Place of Origin:Guangdong, China

... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it

Place of Origin:China

...sic silicone carbide heating rods with cold zone and hotzone silicon carbide element FEATURES ¯¯¯¯¯¯¯¯¯¯¯¯¯¯ 1. Withstands as high as 1500 (surface temperature). 2. Generates high heat output per unit surface area, approximately 5-10 times the output of Nichrome wire. 3. High strength and excellent shock resistance. 4. Heat source is free of noise and air pollution. Item RSiC NSiC SiSiC Si3N4-SiC...

Brand Name:wuxi special ceramic

Model Number:pipes

Place of Origin:Made in China

Silicon Carbide Rollers are used for the high temperature sintering zone of roller hearth kilns.The applications include kiln furniture for table wear porcelain,sanitary wear,construction ceramics,glasses and magnetic materials etc. Silicon Carbide Rollers...

Brand Name:KEGU

Place of Origin:China

Model Number:Customizable

...Sic Silicon Carbide Heater Element FEATURES ¯¯¯¯¯¯¯¯¯¯¯¯¯¯ 1. Withstands as high as 1500 (surface temperature). 2. Generates high heat output per unit surface area, approximately 5-10 times the output of Nichrome wire. 3. High strength and excellent shock resistance. 4. Heat source is free of noise and air pollution. Item RSiC NSiC SiSiC Si3N4-SiC Bulk Density(g/cm3) 2.60-2.74 2.75-2.82 >3.02 2.68 Porosity (%) 15 10

Brand Name:KAMTAI

Model Number:KT-THGB

Place of Origin:CHINA

... with a thickness ranging from 10mm to 30mm, ensuring durability and stability in demanding environments. With a maximum temperature tolerance of 1450°C, these Sic slabs provide reliable performance in extreme heat conditions, making them ideal for

Brand Name:Cersol

Place of Origin:China

Silicon Nitride Bonded Silicon Carbide Products(NSiC) NSiC Silicon Nitride Bonded Silicon Carbide Products are sort of structure ceramic material made bycasting the high-purity silicon carbide and silicon powder, and sintered through nitrified action. NSiC...

Brand Name:Original Factory

Model Number:MSC010SDA170B

Place of Origin:CN

...SiC SBD in a TO-247 package. Specification Of MSC010SDA170B Part Number: MSC010SDA170B Technology: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io) (Per Diode): 31A Voltage - Forward (...

Place of Origin:China

Brand Name:SONGYU

...silicon carbide rod Silicon carbon rods have good chemical stability and strong acid resistance. Alkaline substances have an erosive effect on it under high temperature conditions. Silicon carbon rod components can undergo the following reactions with oxygen and water vapor when used for a long time above 1000 ℃: ① Sic+2O2 → Sio2+CO2 ② Sic+4H2O=Sio2+4H2+CO2 Compressive Strength 2000-3000MPa Electrical Resistivity 10...

Brand Name:Ruideer

Model Number:Customizable

Place of Origin:China

... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the

Brand Name:CSQ

Model Number:Non

Place of Origin:China

Silicon Carbide Grinding Ceramic Ball With Size Of Ø10 MM Description of Ø10 Grinding Ceramic Ball: Our silicon carbide grinding balls are made of highly purified, sub-micron silicon carbide powder and are sintered by pressureless sintering method, so our ...

Brand Name:High Broad Silicon Carbide B4C SIC Ballistic tiles

Model Number:Silicon Carbide SIC ballistic tiles

Place of Origin:China Silicon Carbide Boron carbide Ballistic tiles factory

...Silicon Carbide Armor Tiles Sintered Silicon Carbide (SSiC) Physical Property Technical Parameter Unit SSiC Hardness HS 115 Porosity Rate % <0.2 Density g/cm3 >3.10 Compressive Strength MPa >2500 Fractural Strength MPa >380 Coefficient of Heat Expansion 10-6/°C 4.2 Content of Sic...

Brand Name:JC

Model Number:SIC 240#

Place of Origin:China

... OEM available Material : Sic, OA Grit 60#,80#,180#,240#,320#,600#,800#,1000# MOQ 10 Customized Available Shipment Express/Air cargo/ Sea shipping Port Zhengzhou OEM service: If you need to customize, please provide the ...

Brand Name:JG

Model Number:SIC01

Place of Origin:Zhejiang China

Strong Universality Spare Part Of Mechanica Seal Silicon Carbide Seal Face SPECIFICATION: Index RSiC NSiC RBSiC SiC Bulk density(g/cm3) 2.65-2.75 2.75-2.85 ≥3.02 2.8 SiC(%) ≥99 ≥75 83.66 90 Si3N4(%) 0 ≥23 0 0 Si(%) 0 0 15.65 9 Porosity(%) 15-18 10-12 0.1 ...

Brand Name:YUE MI

Model Number:APV

Place of Origin:Guangzhou, China

DETAILS suitable for APV W+ pump seal Shaft Size 25mm/35mm Material Face: Carbon, SiC, TC Seat: SiC, TC * Mixers and Stirrers: Mixer, Flex-Mix, TPM, TPX * Centrifugal pumps , W +, W + (NEMA), Wa +, Whp, Wi, * Self-priming pumps Ws, Ws (NEMA) * Rotary pumps...

Country/Region:china

SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers. The major products are 2 inch, 3 inch, 4 inch 6 inch silicon carbide...

Brand Name:Baidun/J&J

Place of Origin:China

High-Performance Silicon Carbide Graphite Crucible Introduction Our Silicon Carbide (SiC) Graphite Crucible is a premium refractory solution engineered for extreme thermal and chemical environments. Combining the superior properties of silicon carbide and ...