1200v sic mosfet

Brand Name:Original Factory

Model Number:MSC180SMA120B

Place of Origin:CN

...1200V SiC MOSFET Transistors TO-247-4​ Product Description Of MSC180SMA120B MSC180SMA120B is Silicon Carbide N-Channel Power MOSFET Transistors, 1200V, 180mΩ SiC MOSFET, package is TO-247-4. Specification Of MSC180SMA120B Part Number MSC180SMA120B FET Type N-Channel Technology SiC...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...SiC MOSFETs) are an advanced type of power device, with high efficiency and excellent performance. SiC MOSFETs feature low on-resistance and high power capabilities, enabling reliable operation and superior switching performance. Based on the national military standard production line, the process is stable and the quality is reliable. The use of SiC MOSFETs

Brand Name:Shareway

Model Number:750319331

Place of Origin:Guangdong China

... for 568 Vrms / 800 Vpk Operating temperature: -40 °C up to +130 °C Common control voltages for SiC MOSFET’s High Common-mode Transient Immunity (CMTI) Flyback, LLC, Half-Bridge topologies Up to 6 W output power Wide range ...

Brand Name:Cersol

Place of Origin:China

Description Silicon nitride ceramics have many excellent performances such as high hardness, high strength, small thermal expansion coefficient, small high temperature creep, good antioxidant performance, good thermal corrosion performance, and small ...

Brand Name:ZMSH

Model Number:SiC seed wafer

Place of Origin:CHINA

...SiC seed wafers SiC seed wafer 4H N type Dia 153 155 2inch-12inch customized Used for manufacturing MOSFETs Silicon Carbide (SiC) seed crystal wafers serve as fundamental materials in the semiconductor industry. Manufactured from high-purity silicon carbide (SiC) raw materials through Physical Vapor Transport (PVT) or High-Temperature Chemical Vapor Deposition (HTCVD) processes, our company specializes in supplying 2-12 inch SiC...

Categories:Transistors - FETs, MOSFETs - RF

Country/Region:china

...1200V Overview\\n1011GN-1200V is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have 1011GN-1200V...

Brand Name:original

Model Number:CLA50E1200HB

Place of Origin:Original Factory

...MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor , n channel transistor CLA50E1200HB High Efficiency Thyristor for for line frequency 1200V...

Brand Name:Pe

Model Number:7MBR75UB120-50

Place of Origin:Japan

1200V 75A PIM Mosfet Power Module IC 7MBR75UB120-50 IGBT Module Driver 7MBR75UB120-50 IGBT MODULE (U series) 1200V / 75A / PIM Features . Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic ...

Brand Name:IXYS

Model Number:CLA50E1200HB

Place of Origin:CN

CLA50E1200HB High Efficiency Thyristor for for line frequency 1200V 50A Features / Advantages: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability Applications: ● Softstart AC motor control ● DC Motor control ● Power converter ● ...

Brand Name:ZMSH

Model Number:4H Semi-insulating SiC substarte/wafer

Place of Origin:China

6H-N Semi-insulating SiC substarte/wafer for MOSFETs,JFETs BJTs,high resistivity wide bandgap Semi-insulating SiC substarte/wafer's abstract Semi-insulating silicon carbide (SiC) substrates/wafers have emerged as crucial materials in the realm of advanced ...

Place of Origin:Original

CAS325M12HM2 Specifications Part Status Active FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 444A (Tc) Rds On (Max) @ Id, Vgs 4.3 mOhm @ 400A, 20V ...

Place of Origin:US

Brand Name:Original

Model Number:FGA25N120ANTD

Product Detail Packaging Tube Part Status Active IGBT Type NPT and Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A Power - Max 312W ...

Brand Name:Infineon

Model Number:IR2110STRPBF

Place of Origin:China

IR2110STRPBF 600V/1200V MOSFET Driver 2A Peak Fast 100ns Switching UVLO CMOS/LSTTL Inputs SOIC-16 Ideal for Motor Drives ...

Brand Name:FSC

Model Number:HGTG11N120CND

Place of Origin:USA

...1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET...

Brand Name:FSC

Model Number:HGTG11N120CND

Place of Origin:USA

...1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET...

Brand Name:ZHENAN

Model Number:Silicon Carbide

Place of Origin:China

...Sic Description: Why can silicon carbide withstand such high voltages? Power devices, especially MOSFETs, must be able to handle extremely high voltages. SiC can achieve very high breakdown voltages, from 600V to several thousand volts, due to the dielectric breakdown strength of the electric field being about ten times higher than that of silicon. SiC...

Brand Name:NXP

Model Number:MC33GD3100EK

Gate Drivers EV Inverter Control; IGBT & SiC GDIC Product Attribute Attribute Value Select Attribute Manufacturer: NXP Product Category: Gate Drivers RoHS: Details Product: IGBT, MOSFET Gate Drivers Type: Half-Bridge Mounting Style: SMD/SMT Package / Case...

Brand Name:ADI

Model Number:IKW25N120T2FKSA1

Place of Origin:Original Brand

IKW25N120T2FKSA1 We Just offer NEW & ORIGINAL items , should any of these items be of interest to you, please let us know. we are pleased to quote you our best price . Thank you ! Product parameters category Discrete Semiconductor Products manufacturer ...

Categories:RF Transistors

Country/Region:china

QPD1016 RF JFET Transistors DC-1.7 GHz 500W 50V GaN RF Tr Manufacturer: Qorvo Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Operating Frequency: DC to 1.7 GHz Gain: 23.9 dB Transistor Polarity: N-Channel Vds...

Brand Name:ON

Model Number:NTH4L020N090SC1