200v power mosfet

Brand Name:IR

Model Number:IRFP260MPBF

Place of Origin:USA

... N - Channel Power Mosfet 200V 50A Through Hole Metal Oxide TO247-3 FEATURES Type : MOSFETS-Single Packaging :Tube Part state: ACTIVE FET type : N - Channel Technology : MOSFET (Metal Oxide) Drain-source voltage (VDSS) : 200V Current - Continuous...

Model Number:DMB16C20A

... The DMB16C20A is a 200V N-Channel Depletion-Mode Power MOSFET from ARK Microelectronics. It features a proprietary advanced planar technology with a rugged polysilicon gate cell structure, offering fast switching speeds and high power density. This ...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:RFL2120

RFL2120 is a Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.96A) Part NO: RFL2120 Brand: FSL Date Code: 06+ Quality Warranty: 3 Months Mounting Type: ...

Brand Name:Infineon

Model Number:IRFB260NPBF

Place of Origin:China

.../Current Ratings andnbsp; 200V Drain-Source Breakdown Voltage (Vandlt;subandgt;DsSandlt;/subandgt;)- Supports medium/high-e)voltage applications like motor ...

Place of Origin:US

Brand Name:Original

Model Number:IRFP4668PBF

... (Qg) (Max) @ Vgs 241nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 10720pF @ 50V Power Dissipation (Max) 520W (Tc)

Place of Origin:CN

Brand Name:Original Factory

Model Number:VS-FC270SA20

Automotive IGBT Modules VS-FC270SA20 200V 270A Single Power MOSFET Module SOT-227-4 [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ...

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Categories:High Power MOSFET

Country/Region:china

High Power MOSFET NTMFD0D9N02P1E Power Mosfet 30/25V POWERTRENCH® Power Clip [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ...

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Brand Name:JUYI

Model Number:JY09M

Place of Origin:China

... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Model Number:BUK7K6R8-40E

Place of Origin:Guangdong, China

Brand Name:Nexperia

... V power MOSFET from Nexperia, supplied in the LFPAK56D (SOT-1205) loss-free package. Two matched N-channel die share one 5 x 6 mm surface-mount ...

Brand Name:Original Factory

Model Number:IPT020N10N5ATMA1

Place of Origin:China

Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET...

Model Number:ACPL-339J-000E

...Power MOSFET Gate Drive Optocoupler The ACPL-339J is an advanced, easy-to-use, intelligent optocoupler designed for driving IGBT and Power MOSFETs. It features 1.0 A dual outputs and supports MOSFET buffers of various current ratings, enabling system engineers to scale gate drive designs for different power...

Brand Name:JUYI

Model Number:JY21L

Place of Origin:China

... Description The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRLR3915TRPBF

... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are

Place of Origin:USA

Brand Name:ON Semiconductor

Model Number:NTHD3100CT1G

... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ...

Place of Origin:USA

Brand Name:ON Semiconductor

Model Number:NTHD3100CT1G

... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ...