20v 570ma n channel mosfet

Brand Name:onsemi

Model Number:NTZD3154NT1G

...20V 570mA N Channel MOSFET SMD SMT Mounting Style NTZD3154NT1G ,onsemi ,MOSFET , SOT-563-6 , 2 N-Channel , NTZD3154N , 20 V , 570 mA , Product Attribute Attribute Value Manufacturer: onsemi Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-563-6 Transistor Polarity: N-Channel Number of Channels: 2 Channel...

Brand Name:onsemi

Model Number:NTMFS4C020NT1G

Place of Origin:Multi-origin

NTMFS4C020NT1G MOSFET Power Electronics Product Description: The NTMFS4C020NT1G MOSFET Power Electronics is a N-Channel MOSFET designed to provide reliable performance in a wide range of power electronics applications. This device has an on-resistance of ...

Brand Name:N-X-P Semiconductors

Model Number:PMCXB900UE

Place of Origin:USA

... Polarity: N-Channel, P-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 600 mA, 500 mA Rds On - ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:8H02ETS

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8H02ETS

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMA1023PZ

High Power MOSFET FDMA1023PZ Dual P-Channel PowerTrench^® MOSFET -20V , -3.7A, 72mΩ High Power MOSFET FDMA1023PZ Dual P-Channel PowerTrench® MOSFET -20V , -3.7A, 72mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-...

Brand Name:Original Factory

Model Number:PMDXB600UNE

Place of Origin:CN

... ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Specification Of PMDXB600UNE Product Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss)

Brand Name:Vishay

Model Number:SI2333DDS-T1-GE3

Place of Origin:China

...MOSFET andbull; 100 % Rg Tested andbull; Material categorization: For definitions of compliance please see andnbsp; APPLICATIONS andbull; Smart Phones and Tablet PCs - Load Switch - Battery Switch andnbsp; Overview The Sl2333DDS-T1-GE3 is an advanced 20V P-channel MOSFET...

Brand Name:CJ

Model Number:CJ2312

Place of Origin:CN

CJ2312 N - Channel 20V 5A ( D - S ) Mosfet SOT-23 ( TO-236 ) 3-Lead Plastic - Encapsulate Mosfets FEATURES: • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ...

Place of Origin:US

Brand Name:Original

Model Number:SI2399DS-T1-GE3

Product Detail Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, ...

Brand Name:Diodes Incorporated

Model Number:W5500

Place of Origin:Taiwan

... Products 　 Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series MOSFET Package Tape & Reel (TR) Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id)

Brand Name:Infineon Technologies

Model Number:SPD06N80C3

Place of Origin:CHINA

... Vgs(th) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 785pF @ 100V FET Feature -

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: Introducing Low Voltage MOSFET from SGT, a breakthrough FOM optimization which covers more applications. This low gate voltage mosfet offers low power loss and low threshold voltage that allows it to be used in various motor driver, 5G...

Brand Name:Ti

Model Number:FDMS86181

... 50% lower Qrr than other MOSFET suppliers Lowers switching noise/EMI MSL1 robust package design 100% UIL tested RoHS Compliant General Description This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that

Brand Name:onsemi

Model Number:ATP114-TL-H

Place of Origin:United States

...Channel 60 V 55A (Ta) 60W (Tc) Surface Mount ATPAK Features:ATP114-TL-H Category Single FETs, MOSFETs Mfr onsemi FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 55A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 16mOhm @ 28A, 10V Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V Vgs (Max) ±20V...

Place of Origin:United States

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Brand Name:AOS

Model Number:AO9926B

Place of Origin:AMERICA

Brand Name:VISHAY

Model Number:SIRA04DP-T1-GE3

Place of Origin:CHINA

SIRA04DP-T1-GE3 ELECTRONIC INTEGRATED CIRCUITS THE PowerPAK PACKAGEThe PowerPAK package was developed around the SO-8package (figure 1). The PowerPAK SO-8 utilizes the samefootprint and the same pin-outs as the standard SO-8. Thisallows PowerPAK to be ...

Brand Name:FAIRCHILD

Model Number:FDV305N

Place of Origin:Original

FDV305N 20V N-Channel PowerTrench MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Applications • Load switch • Battery protection • Power ...

Brand Name:ON

Model Number:NTTFS3A08PZTAG

Place of Origin:America

...MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFET P-CH 20V 22A 8-Pin WDFN EP T/R 4. components -20V,-15A,6.7m ,P channel...