2n4126 transistor 200ma 625mw

Brand Name:ZETEX

Model Number:FMMT734TA

Place of Origin:CHINA

...Transistors Bipolar (BJT) Transistor PNP - Darlington 100V 800mA 140MHz 625mW Surface Mount SOT-23-3 Features  BVCEO > -100V  IC = -800mA High Continuous Collector Current  Darlington Transistor hFE > 20k @ 100mA for High Gain  High Gain Hold-Up to 5A  625mW...

Brand Name:ZETEX

Model Number:FMMT734TA

Place of Origin:CHINA

...DarliCM GROUPon Transistor hFE > 20k @ 100mA for High Gain  High Gain Hold-Up to 5A  625mW Power Dissipation  Complementary DarliCM GROUPon NPN Type: FMMT634  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  ...

Model Number:MPSA14

Brand Name:Original

Place of Origin:US

...Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V Power - Max 625mW...

Model Number:Bss138

Place of Origin:Guangdong, China

Brand Name:original

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Brand Name:ROHM

Model Number:2SD1781KT146R

Place of Origin:China

2SD1781KT146R 2A 160V NPN Transistor with High hFE 120-240 625mW Power Low Noise Built-in Diode SOT-89-3 Package Halogen-Free Tape andamp; Reel Packaging andnbsp; ...

Brand Name:FAIRCHILD

Model Number:KSP2907A

Place of Origin:Malaysia

...Purpose Mosfet Transistor / General Purpose NPN Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 for graphs PNP Epitaxial Silicon Transistor Absolute Maximum...

Brand Name:original

Model Number:MPS6560

Place of Origin:original

MPS6560 Bipolar Transistors BJT Discrete Semiconductors original Product Attribute Attribute Value Product Category: Bipolar Transistors - BJT Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 25 V Collector- Base Voltage ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:M28S

TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP) FEATURE Ÿ High DC Current Gain and Large Current Capability MARKING M28S=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE, XXX=Code ORDERING INFORMATION...

Place of Origin:Original

ZVN3320A Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 3V @ 1mA Gate ...

Brand Name:KEC

Model Number:2N3906S-RTK/PS

Place of Origin:KOREA

2N3906S-RTK/PS KEC Electronic Diodes And Transistors PNP 40V 200mA SOT-23

Brand Name: USA Inc.

Model Number:PH2369

Place of Origin:CHINA

...Transistor NPN 15V 200mA 500MHz 500mW Through Hole TO-92-3 DESCRIPTION NPN switching transistor in a TO-92 FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching. Product Attributes Transistor Type NPN Current - Collector (Ic) (Max) 200mA...

Model Number:1n4148

Place of Origin:China

Brand Name:Original

100V maximum reverse voltage 200mA small signal dioDE-DO-35 Diode 1n4148 Products Description: 1.1N4148 series 500 mW 100 V maximum reverse voltage 200 mA small signal diode-DO-35 2.ON Semiconductor 1N4148 small signal diode, Iout=300mA, Vrev=100V, 1MHz ...

Brand Name:onsemi

Model Number:BSS138LT1G

Place of Origin:original

... Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 3.5Ohm @ 200mA, 5V Vgs(th) (Max) @ Id 1.5V @ 1mA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds ...

Brand Name:ON Semiconductor

Model Number:BAV70LT1G

Place of Origin:Shenzhen,China

BAV70LT1G IC DIODE ON Semiconductor ARRAY GP 70V 200MA SOT23-3 Product description rated over a −40°C to +105°C temperature Part number BAV70LT1G is manufactured by ON Semiconductor Company and distributed by AYE. As one of the leading distributors of ...

Brand Name:Original

Model Number:MMBT3904

...2N3904 3904 TRANS NPN SOT23 1AM IC SOT-23 Plastic-Encapsulate Transistors NPN 40V 200mA 1AM 100-300 SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) FEATURES z Complementary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (T a=25°C unless oth...

Model Number:Dt9942

Place of Origin:CHINA

... 200mA±(1.2%+5) RESISTANCE: 200/2k/20k/200kΩ±(0.8%+5), 20MΩ±(1.5%+5), CAP: 20n/2uF±(2.5%+±20),200uF±(5%+10) CONTINUITY BUZZER DIODE TRANSISTOR HFE POWER SUPPLY: 6F22or NEDA 9V×1 SIZE:136×78×23mm WEIGHT: about155g(Include battery) FAQ 1. What

Brand Name:Torex Semiconductor Ltd

Model Number:XC9265A3014R-G

Product Details GENERAL DESCRIPTION The XC9206/XC9207/XC9208 series is a group of DC/DC converters with a built-in 0.4Ω P-channel driver transistor, offered in a SOT-25 package. The ICs are designed to provide high efficiencies and a stable power supply...

Model Number:MMST5551

Place of Origin:Malaysia

Brand Name:KAIGENG

MMST5551SOT-323 Electronic Components IC MCU Microcontroller Integrated Circuits MMST5551 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...

Categories:Bipolar RF Transistors

Country/Region:china

RF Transistor NPN 15V 50mA 900MHz 625mW Through Hole TO-92-3

Categories:Bipolar RF Transistors

Country/Region:china

RF Transistor NPN 16V 200mA 870MHz 2.2W Surface Mount 8-SO