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All 32mx4 sdram chip 1 2v wholesalers & 32mx4 sdram chip 1 2v manufacturers come from members. We doesn't provide 32mx4 sdram chip 1 2v products or service, please contact them directly and verify their companies info carefully.
| Total 8 products from 32mx4 sdram chip 1 2v Manufactures & Suppliers |
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Brand Name:ICMAX Model Number:IMD256M16R4ABD8LY Place of Origin:CN DDR4 4Gb SDRAM Memory Chip Refresh IMD256M16R4ABD8LY DDR4 SDRAM IMD256M16R4ABD8LY – 32 Meg x 16 x 8 Banks Features VDD = VDDQ = 1.2V ±60mV VPP = 2.5V, –125mV/+250mV On-die, internal, adjustable VREFDQ generation 1.2V pseudo open-drain I/O TC of 0°C... |
Shenzhen Filetti Technology Co., LTD
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Brand Name:SAMSUNG Model Number:K4AAG165WA-BCWE Place of Origin:Original K4AAG165WA-BCWE DRAM Chip DDR4 SDRAM 16Gbit 1Gx16 1.2V 96-Pin FBGA ECCN (US) EAR99 Part Status Active HTS 8542.32.00.36 Automotive No PPAP No DRAM Type DDR4 SDRAM Chip Density (bit) 16G Organization 1Gx16 Number of Internal Banks 16 Number of Words per ... |
Wisdtech Technology Co.,Limited
Guangdong |
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Brand Name:Original Factory Model Number:P3A4GL4BLF-GJN Place of Origin:CN ...Chip 4Gbit DDR4 SDRAM Memory IC TFBGA96 Product Description Of P3A4GL4BLF-GJN P3A4GL4BLF-GJN is a 4Gbit DDR4 Synchronous Dynamic Random‑Access Memory, package is TFBGA-96. Specification Of P3A4GL4BLF-GJN Capacity: 4Gbit Type: DDR4 SDRAM Package: TFBGA-96 Dimension: 7.50mm x 13.00mm Ball Pitch: 0.80mm Temperature Range: -40℃ to 95℃ VDD/VDDQ/VPP: -1.2V /1.2V... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Anterwell Model Number:MT46V8M16 Place of Origin:original factory DOUBLE DATA RATE (DDR) SDRAM FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte) • ... |
Anterwell Technology Ltd.
Guangdong |
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Model Number:MT46V8M16 Place of Origin:original factory DOUBLE DATA RATE (DDR) SDRAM FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte) • ... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:Micron Technology Inc. Model Number:MT41K256M16TW-107 IT:P Place of Origin:original ...Chips – High Performance Reliability Product Listing: MICRON MT41K256M16TW-107 Flash Memory Chips Features: - High-density, four-bank 8Gb DDR4 SDRAM - Operating frequency up to 2400 MT/s - Single-rank x4, dual-rank x8, quad-rank x16 - On-die termination (ODT) support - On-the-fly data scrubbing - Write-leveling support - 1.2V or 1.35V voltage options Specifications: - Memory Type: DDR4 SDRAM... |
Shenzhen Sai Collie Technology Co., Ltd.
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Place of Origin:Original MT52L256M64D2GN-107 WT ES:B TR Specifications Part Status Obsolete Memory Format RAM Memory Type Mobile LPDDR3 SDRAM Memory Size 16G (256M x 64) Speed 933MHz Interface - Voltage - Supply 1.2V Operating Temperature -30°C ~ 85°C (TC) Package / Case - ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Brand Name:original Model Number:MT40A512M16HA-083E:A Place of Origin:original MT40A512M16HA-083E:A Memory ICs DRAM SDRAM - DDR4 SMD/SMT Tray • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV, +250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • Refresh time of 8192-cycle at TC temperature range: – 64ms... |
Walton Electronics Co., Ltd.
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