330w rf transistors

Categories:RF Transistors

Country/Region:china

...Channel 75 V 130A (Tc) 330W (Tc) Through Hole TO-220AB RF Transistors Manufacturer: Infineon Product Category: MOSFETs RoHS: - REACH - SVHC: - Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of ...

Brand Name:Analog Devices Inc.

Model Number:AD9361BBCZ

Place of Origin:Multi-origin

...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF...

Brand Name:Wolvesteam

Model Number:WT700260

Place of Origin:USA

12 Bands Waterproof Convoy Vehicle Bomb Jammer Full Band Frequency RF Cell Phone Signal Jammer Product description : This device is not only bomb jammers, but also high power portable DDS convoy jamming system,portable RF jammer,portable vehicle bomb ...

Categories:Electronic Semiconductors

Country/Region:china

..., high gain, and high-speed performance in compact packages. Key Features: Type: NPN RF Transistor Transition Frequency (ft): 25 GHz Noise Figure (NF): 0.75 dB at 2 GHz Gain (Gmax): 21 dB at 1.8 ...

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to ...

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Model Number:BFQ67W

Place of Origin:CN

... to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.

Place of Origin:CN

Brand Name:Original Factory

Model Number:QPD0007

Wireless Communication Module QPD0007 Single-Path 5GHz 20W 48V GaN RF Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...

Brand Name:Anterwell

Model Number:BFR91A

Place of Origin:original factory

Stock Offer (Hot Sell) Part no. Quantity Brand D/C Package EPM3128ATC100-10N 3000 ALTERA 16+ TQFP-100 HFA08TB60PBF 3000 VISHAY 16+ TO-220 HT7533-1 3000 HOLTEK 13+ SOT89 HT9170B 3000 HOLTEK 15+ DIP18 IMP811T 3000 IMP 16+ SOT143 IRF840PBF 3000 VISHAY 16+ ...

Brand Name:TX TELSIG

Model Number:YP242434

Place of Origin:China

TXtelsig YP242434 Wifi RF Amplifier 2.4GHz 802.11b/g/n WLAN Power Amplifier The YP242434 is a high-power, high- linearity power amplifier based on the highly-reliable InGaP/GaAs HBT technology. It can be easily configured for high-power, high- linearity ...

Model Number:SD1480

Place of Origin:Malaysia

Brand Name:KAIGENG

SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:original

Model Number:FCF06A40

Place of Origin:original

Product Category: Rectifiers Mounting Style: Through Hole Package / Case: TO-220-3 Vr - Reverse Voltage: 400 V If - Forward Current: 6 A Type: Fast Recovery Rectifiers Configuration: Single Max Surge Current: 60 A Ir - Reverse Current: 20 uA Recovery Time...

Brand Name:MITSUBISHI

Model Number:RA20H8087M

Place of Origin:JAPAN

Brand Name:Infineon

Model Number:IRGP4063DPBF

Place of Origin:Original

IRGP4063DPBF IGW50N60H3 IGP50N60T IKD06N60RA Insulated Gate Bipolar Transistor Applications •uninterruptible power supplies •welding converters •converters with high switching frequency Specifications Product Attribute Attribute Value Package / Case: TO-...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Place of Origin:Original

STP180N55F3 Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4V @ 250µA ...

Model Number:IRGP4063DPBF

Brand Name:Original

Place of Origin:US

...) 96A Current - Collector Pulsed (Icm) 144A Vce(on) (Max) @ Vge, Ic 2.14V @ 15V, 48A Power - Max 330W Switching Energy 625µJ (on), 1.28mJ (off) Input Type Standard Gate Charge 95nC Td (on

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MRF374A

MRF374A is a RF POWER FIELD EFFECT TRANSISTOR. Part NO: MRF374A Brand: FSL Date Code: 286+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...

Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor...