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All 350 m sic silicon carbide substrate wholesalers & 350 m sic silicon carbide substrate manufacturers come from members. We doesn't provide 350 m sic silicon carbide substrate products or service, please contact them directly and verify their companies info carefully.
| Total 15 products from 350 m sic silicon carbide substrate Manufactures & Suppliers |
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Brand Name:ZMSH Model Number:4H-P SiC Place of Origin:CHINA ...Sic Silicon Carbide Substrate 4H-P Diameter 150mm Thickness 350μm Zero MPD Production, Standard Production Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-temperature, high-frequency, and high-power electronic devices. 4H-SiC... |
SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai |
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Brand Name:ZMKJ Model Number:1x1x0.5mmt Place of Origin:China Silicon carbide wafer optical 1/2/3 inch SIC wafer for sale Sic Plate Silicon Wafer Flat Orientation Enterprises for Sale 4inch 6inch seed sic wafer 1.0mm Thickness 4h-N SIC Silicon Carbide Wafer For seed growth 6H-N/6H-Semi 4H HPSI 5*10mmt 10x10mmt 5*5mm polished Silicon Carbide sic substrate chips Wafer About Silicon Carbide (SiC)Crystal Silicon carbide (SiC), or carborundum, is a semiconductor containing silicon... |
SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai |
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Place of Origin:China Product Description Outer Diameter (mm) Hot zone ( mm) Cold zone (mm) Overall length(mm) Range of resistance 8 100-300 60-200 240-700 2.1-8.6 12 100-400 100-350 300-1100 0.8-5.8 14 100-500 150-350 400-1200 0.7-5.6 16 200-600 200-350 600-1300 0.7-4.4 18 200... |
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
Henan |
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Brand Name:ANG Model Number:ANG-H6 Place of Origin:Guangdong, China ... silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, |
Shenzhen A.N.G Technology Co., Ltd
Guangdong |
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Brand Name:KEGU Place of Origin:China Model Number:Customizable Silicon Carbide Sic Heating Element Ed Type Industrial Nitrogen-Resistant Silicon Carbide Sic Heating Element Rod Overview Product Description Outer Diameter (mm) Hot zone ( mm) Cold zone (mm) Overall length(mm) Range of resistance 8 100-300 60-200 240-700 2.1-8.6 12 100-400 100-350 300-1100 0.8-5.8 14 100-500 150-350 400-1200 0.7-5.6 16 200-600 200-350... |
Shaanxi KeGu New Material Technology Co., Ltd
Shaanxi |
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Brand Name:HMT Model Number:6 INCH Place of Origin:CHINA ...SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer supplier Homray Material Technologyprovide high quality silicon carbide SiC wafer to electronic and opto electronicindustry. Silicon carbide SiC waferis a next generation semiconductor material, with unique electricalpropertiesand excellent thermal properties , compared to silicon wafer and galliumarsenide wafer ,silicon carbide... |
Homray Material Technology
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Brand Name:Ruideer Model Number:Customizable Place of Origin:China ... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the |
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd
Hunan |
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Brand Name:JC Model Number:SIC 240# Place of Origin:China ... available Material : Sic, OA Grit 60#,80#,180#,240#,320#,600#,800#,1000# MOQ 10 Customized Available Shipment ... |
ZHENGZHOU JINCHUAN ABRASIVES CO., LTD.
Henan |
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Brand Name:Original Factory Model Number:MSCDC100A170D1PAG Place of Origin:CN ... recovery and zero forward recovery, Aluminum nitride (AlN) substrate for improved thermal performance. Specification Of MSCDC100A170D1PAG Part Number: MSCDC100A170D1PAG Speed: No Recovery Time > 500mA (Io Voltage - Forward (Vf) (... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:PAM-XIAMEN Place of Origin:China ...Silicon Substrate, Research Grade,10mm x 10mm PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide) wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC... |
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian |
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Brand Name:OEM/High Broad Model Number:Armor Ceramic Place of Origin:China ...SIC ceramic tiles / silicon carbide ceramic plates/ boron carbide plates used in Bulletproof Vest Silicon carbide powders are used to manufacture hard ceramics, refractories, abrasives, and composite reinforcements. Single-crystal products are as used as compounds in semiconductor substrates for high-temperature applications. Silicon carbide... |
China Hunan High Broad New Material Co.Ltd
Hunan |
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Brand Name:CSQ Model Number:customized products Place of Origin:China ... environments. It combines a wear-resistant Silicon Carbide (SiC) face with a structural Stainless Steel mounting substrate, offering an optimal balance of superior hardness and mechanical strength. Key Features Exceptional Wear & Abrasion Resistance: The |
Beijing Zhongxing Shiqiang CERAMIC BEARING Co., Ltd.
Beijing |
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Brand Name:Jinghui Ceramics Model Number:JH.ZRCP.001 Place of Origin:China ... 0.3mm Thick Thin Film Zirconia ZrO2 Ceramic Substrate Specification of ceramic rods: 1. Raw material: Yttria stabilized zirconia, MgO stabilized zirconia, 95~99.5% alumina, Silicon carbide (SiC) 2. Forming method: Extruding, Dry pressed, Ceramic injection... |
Jinghui Industry Limited
Guangdong |
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Brand Name:Grace Model Number:G-7002 Place of Origin:Jiangsu-China ...o called wall flow filter, whose materials are cordierite or silicon carbide. It adopt opening and blocking up passages in both ends and the exhaust gas flow through the porous beehive wall to filter particles, can effectively remove ... |
Wuxi Grace Environmental Technology CO,.LTD
Jiangsu |
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Brand Name:SS GOLD Model Number:SB-20;104-25 Place of Origin:CHANGZHOU ... seal rotary ring Ceramic/silicon carbide/tungsten carbide stationary ring carbon/sic/tc secondary seal HNBR/NBR/Viton/EPDM spring SS/SUS304/SUS316/CU certification ISO9001:2008 Technical Data Speed:0-5000rpm tempreture:-40~350 pressure:0-0.6mpa |
CHANGZHOU DIESEL IMP&EXP CO.,LTD
Jiangsu |