4h crystal sic epitaxial wafer

Brand Name:ZMSH

Model Number:4H 6inch SiC Epitaxial Wafer

Place of Origin:CHINA

SiC Epi Wafer Overview​ ​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device The 4H-SiC epitaxial wafer is a core material for carbon disulfide (SiC) power devices, fabricated on a 4H-SiC single-crystal substrate via chemical vapor deposition (CVD). Its unique crystal...

Brand Name:ZMSH

Place of Origin:China

SiC Epitaxial Wafer Silicon Carbide 4H 4inch 6inch High Resistivity Semiconductor Industry Description of SiC Epitaxial Wafer: Silicon carbide epitaxy is a compound semiconductor material composed of carbon and silicon elements (excluding doping factors). Silicon carbide (SiC) epitaxial...

Brand Name:HMT

Place of Origin:CHINA

...4H-SI SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy...

Brand Name:PAM-XIAMEN

Place of Origin:China

4H N Type SiC Lapping Wafer, Optical Grade, 2”Size -Powerway Wafer PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer...

Brand Name:Ruideer

Model Number:Customizable

Place of Origin:China

... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the

Brand Name:CSIMC

Model Number:SrTiO3 wafer

Place of Origin:China

...crystal is used for epitaxial growth and most oxide films SrTiO3 (Strontium Titanate), a perovskite oxide with exceptional physical properties, is a cornerstone material in the field of solid-state physics and electronics. Its single-crystal wafers exhibit remarkable dielectric, ferroelectric, and superconducting characteristics, depending on the temperature and doping conditions. These wafers...

Brand Name:Silian

Model Number:Customized

Place of Origin:China

... optical grade Kyropoulos grown sapphire crystals. high purity single crystal sapphire epitaxial substrate is suitable for direct epitaxial process, PSS process, ALN process and other epitaxial methods. It has the characteristics of uniform wavelength,

Brand Name:Crystro

Model Number:CR210127-06

Place of Origin:China

...Wafer Gadolinium gallium garnet(GGG) is a special substrate magneto optical flims.substituted iron garnet epitaxial films, which is good material for YIG,and BIG flim. Substituted Gadolinium Gallium Garnet (SGGG) is used as substrates for liquid epitaxy. The lattice parameter of our crystals is well controlled and the surface polish finishing is of the highest quality, allowing a perfect epitaxy. Crystal

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

... material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2

Brand Name:CAEC

Place of Origin:Henan, China

...epitaxial wafers. They can be used steadily on the Japanese, Korean and Taiwanese grinders with high performance. Workpiece: sapphire epitaxial wafer, SiC substrate epitaxial wafer, Si substrate epitaxial wafer. Material of workpiece: Synthetic sapphire, SiC ,single crystal...