4j42 power transistor to package

Brand Name:Infineon

Model Number:BSZ040N06LS5ATMA1

Place of Origin:original

BSZ040N06LS5ATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-Transistor 60V Package 8-PowerTDFN FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (...

Brand Name:JOPTEC

Place of Origin:HEFEI, CHINA

Product Name Robust Coining Base with A Large Diameter Wire Bond Surface Product Model JOPTEC Plating Coating Fully plating Au or selective plating Au Finish Shell and pins are plated Ni:2~11.43um and Au≥1.3um;Cap is plated Ni:2~11.43um Product Formation ...

Brand Name:original

Model Number:SIHB22N60E-E3

Place of Origin:Original Manufacturer

...POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS Product Technical Specifications Manufacturer Vishay Siliconix Series - Packaging...

Brand Name:ST

Model Number:TIP42C

Place of Origin:Original Factory

... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching ...

Brand Name:Original brand

Model Number:BSZ037N06LS5ATMA1

Place of Origin:Original

...freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Application Categories Mosfet Power Transistor BSZ037N06LS5ATMA1 Package TSDSON-8 FL Serise OptiMOS Leakage Source on

Brand Name:VISHAY

Model Number:SIHB22N60E-E3

Place of Origin:CHINA

High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS Product Technical Specifications Manufacturer Vishay Siliconix Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET...

Brand Name:Hua Xuan Yang

Model Number:AP50N10P

Place of Origin:ShenZhen China

...Power Supplies SMPS Mosfet Power Transistor 50A 100V Mosfet Power Transistor Description: The AP50N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Mosfet Power Transistor Features VDS = 100V ID =50 A RDS(ON) < 22mΩ @ VGS=10V Package...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF557

...POWER TRANSISTOR NPN SILICON Description: Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. Applications: • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8.0 dB Efficiency 60% (Typ) • Cost Effective PowerMacro Package...

Brand Name:Hua Xuan Yang

Model Number:AOD407

Place of Origin:ShenZhen China

...gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON)

Brand Name:FUJI

Model Number:6DI30A-120

Place of Origin:JAPAN

...Transistors 30A, 1200V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR Electrical Characteristics Collector Current-Max (IC) 30A Collector-emitter Voltage-Max 1200V Configuration COMPLEX DC Current Gain-Min (hFE) 70A Fall Time-Max (tf) 3000 JESD-30 Code R-PUFM-X17 Number of Elements 6 Number of Terminals 17 Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR Package Style FLANGE MOUNT Polarity/Channel Type NPN Power...

Brand Name:Diode Triode Transistor

Model Number:TIP137

Place of Origin:USA

...Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor...

Brand Name:STMICROELECTRONICS

Model Number:TIP3055

Place of Origin:Original

...Power Transistors high power mosfet transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Device summary Order code Marking Package Packaging...

Brand Name:Infineon

Model Number:IKW25N120T2

Place of Origin:Original Factory

IKW25N120T2,1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package Insulated Gate Bipolar Transistor IKW25N120T2 K25T1202 1200V 25A Igbt Transistors Description 1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package Infineon ...

Brand Name:Lingxun

Place of Origin:China

...Power Transistor IGBT For High-Power Electronic Controls Product Description: The High-Power IGBT is packaged in a TO-247 package type, which is ideal for high-power applications. It has a voltage rating of 650V-1200V and can operate at an application frequency of 20KHz-60KHz, making it suitable for various applications. One of the key features of the High-Power...

Brand Name:INNOTION

Model Number:YP01401650T

Place of Origin:Jiangsu, China

...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package...

Brand Name:Original

Model Number:IPG20N06S4L14AATMA1

Place of Origin:Original

...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor

Brand Name:Original Factory

Model Number:IGLD60R190D1AUMA1

Place of Origin:CN

GaN IC IGLD60R190D1AUMA1 N-Channel CoolGaN Power Transistor 8-LDFN Surface Mount Product Description Of IGLD60R190D1AUMA1 IGLD60R190D1AUMA1 is N-Channel CoolGaN power transistor,the package is 8-LDFN surface mount. Specification Of IGLD60R190D1AUMA1 FET ...

Brand Name:ONSEMI

Model Number:BD135

Place of Origin:Original

... complementary or quasi complementary circuits. Features • Pb−Free Packages are Available • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with ...

Place of Origin:US

Brand Name:Original

Model Number:2n2222A

...Packaging Bulk Part Status Obsolete Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V Power - Max 500mW Mounting Type Through Hole Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package...

Brand Name:Julun

Model Number:PG-TO 220

Place of Origin:CHINA

...Power Transistor IPA80R1K4CE Field Effect Transistor Description CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level. CoolMOS™ 800V CE comes with selected package choice offering the benefit of reduced system costs and higher power...