500v power mosfet

Place of Origin:China

Brand Name:ONSEMI

Model Number:FQS4903

High Power MOSFET FQS4903 N-Channel QFET® MOSFET 500V, 0.37A, 6.2Ω [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 ...

Brand Name:JUYI

Model Number:JY8N5M

Place of Origin:China

...500V/8A N Channel Enhancement Mode Power MOSFET GENERAL DESCRIPTION The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ● 500V...

Brand Name:IXYS Corporation

Model Number:IXTH460P2

Place of Origin:Shenzhen, China

...Power MOSFET N-CH 500V 24A TO-247 Distinctive Characteristics : Part No: IXTH460P2 Description: PolarP2 Power MOSFET N-CH 500V 24A TO-247 Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500V...

Model Number:SMH13N50

...500V N-Channel MOSFET The SMH13N50 is a 500V N-Channel MOSFET from HUAKE Semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It offers a low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it a reliable component for demanding power applications.Product Attributes Brand: HUAKE Semiconductors Product Type: N-Channel MOSFET...

Brand Name:IXYS

Model Number:IXFH60N50P3

Place of Origin:Philippines

Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier Polar3TM HiperFETTM IXFT60N50P3 VDSS = 500V Power MOSFET IXFQ60N50P3 I D25 = 60A IXFH60N50P3 RDS(on) ≤ 100mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ...

Brand Name:STMicroelectronics

Model Number:STF28NM50N

Place of Origin:China

...Power MOSFET 500V/28A Rating Low 0.135andOmega; Rds(on) Fast Switching Avalanche Rugged Eco-Mode Low Gate Charge TO-220FP Package RoHS Certified for SMPS andamp; Motor Drives andnbsp; Features andbull; 100% avalanche tested andbull; Low input capacitance and gate charge andbull; Low gate input resistance andnbsp; Applications andbull; Switching applications andnbsp; Description These devices are N-channel Power MOSFETs...

Brand Name:FUJI

Model Number:FMH23N50E

Place of Origin:Original

Fuji N-Channel FMH23N50E Silicon Power Mosfet 23a 500v Dc-Dc Converters Power Supply Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Features Maintains both low power loss and low noise Lower RDS(on) characteristic Mor...

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:juyi

Model Number:JY8N5M

Place of Origin:China

... combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Features: ● 500V/8A, RDS(ON) =0.75Ω@VGS=10V(Typical) ●Fast switching and reverse body recovery ●

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ...

Model Number:SW-RVV 3*4

Place of Origin:Guangdong, China

Brand Name:OEM/ODM

...power cord CE CCC VDE RVV cable is called copper-core PVC insulated PVC sheathed soft wire. Also it known as light PVC sheathed soft wire, commonly known as soft sheathed wire, is a kind of sheathed wire. The rated voltage is 300V/500V, or more copper cores are twisted to form a cable, the outer direction of the strangulation direction is right. RVV cable is mainly used in power...

Brand Name:Original Factory

Model Number:SCTWA50N120

Place of Origin:CN

1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package. Specification Of ...

Model Number:BUK7K6R8-40E

Place of Origin:Guangdong, China

Brand Name:Nexperia

... V power MOSFET from Nexperia, supplied in the LFPAK56D (SOT-1205) loss-free package. Two matched N-channel die share one 5 x 6 mm surface-mount ...

Brand Name:Original Factory

Model Number:IPT020N10N5ATMA1

Place of Origin:China

Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET...

Model Number:ACPL-339J-000E

...Power MOSFET Gate Drive Optocoupler The ACPL-339J is an advanced, easy-to-use, intelligent optocoupler designed for driving IGBT and Power MOSFETs. It features 1.0 A dual outputs and supports MOSFET buffers of various current ratings, enabling system engineers to scale gate drive designs for different power...

Brand Name:JUYI

Model Number:JY21L

Place of Origin:China

... Description The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRLR3915TRPBF

... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are

Place of Origin:USA

Brand Name:ON Semiconductor

Model Number:NTHD3100CT1G

... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ...