55v 30a hexfet power mosfet

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRLR3915TRPBF

... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRLR3915TRPBF

Place of Origin:CHINA

... Technologies/International Rectifier IOR HEXFET MOSFET N-Channel 55V 30A DPAK Discrete Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve...

Brand Name:Infineon Technologies

Model Number:IRF7476TRPBF

Place of Origin:Multi-origin

...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high power dissipation of 12W. 4. This MOSFET is ideal for applications such as DC/DC converters, audio amplifiers and motor drives. 5

Brand Name:INFINEON

Model Number:IRF3205PBF

Place of Origin:Germany

...Hexfet Power Mosfet 10A 55V 200W Field - effect tube inverter high - power Mosfet tube Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs...

Brand Name:IRF

Model Number:IRF7329

Place of Origin:Thailand

... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well

Model Number:IRLL024NTRPBF

Place of Origin:original factory

... HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well

Place of Origin:PHILIPPINE

Brand Name:International Rectifier

Model Number:IRF7342Q

...HEXFET Power MOSFET Description: Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET...

Place of Origin:USA

Brand Name:IR (International Rectifier)

Model Number:IRLML6346TRPBF

...: EIS Part Number: EIS-IRLML6346TRPBF Manufacturer Part Number: IRLML6346TRPBF Manufacturer / Brand: IR (International Rectifier) Brief Description: HEXFET Power MOSFET Quantity Available: 7073 Pieces Unit Price: Email us: sales009@eis-limited.com D/C

Place of Origin:USA

Brand Name:IR (International Rectifier)

Model Number:IRLML6346TRPBF

...: EIS Part Number: EIS-IRLML6346TRPBF Manufacturer Part Number: IRLML6346TRPBF Manufacturer / Brand: IR (International Rectifier) Brief Description: HEXFET Power MOSFET Quantity Available: 7073 Pieces Unit Price: Email us: sales009@eis-limited.com D/C

Brand Name:INFINEON

Model Number:RFR4105ZTRPBF

... Series HEXFET® Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55 V Current - Continuous Drain (Id) @ 25°C 30A (Tc)

Brand Name:IOR

Model Number:IRFZ44NPBF

Place of Origin:CHINA

...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:Infineon Technologies

Model Number:IRF3205PBF

Place of Origin:Original

...Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:Infi neon

Model Number:IRF3205PBF

Place of Origin:Shenzhen, China

.... Fast Switching. Fully Avalanche Rated. Lead-Free. Absolute Maximum Ratings : Description : Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

Brand Name:Original Factory

Model Number:AUIRF8739L2TR

Place of Origin:CN

...MOSFET AUIRF8739L2TR 40V Automotive Single N-Channel HEXFET Power MOSFET Description AUIRF8739L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power...

Place of Origin:China

Brand Name:ONSEMI

Model Number:HUF75321D3ST

High Power MOSFET HUF75321D3ST N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ...

Brand Name:Original brand

Model Number:IRFR024NTRPBF

Place of Origin:Original Factory

...POWER TRANSISTOR IRFR024NTRPBF D- PAK N- CHANNEL 55V 17A 45W Detailed Product Description FET Type: N-Channel Operating Temperature: -55°C ~ 175°C Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Free Status / RoHS Status: Lead Free / RoHS Compliant High Light: high power mosfet transistors , n channel mosfet transistor IRFR024NTRPBF D-PAK N-Channel 55V...

Model Number:NP110N055PUG

Place of Origin:US

Brand Name:Original

MOSFET N-CH 55V 110A TO-263 NP110N055PUG Product Description Packaging Tape & Reel (TR) Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive ...

Brand Name:Infineon

Model Number:IRFR024NTRPBF

Place of Origin:China

...55V 24A N-Channel MOSFET with Ultra-Low 0.028andOmega; RDS(on), Fast Switching Speed 100% Avalanche Tested Compact DPAK Package Lead-Free andamp; RoHS Compliant andnbsp; Applications Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power...

Brand Name:OEM/ODM

Place of Origin:China

Model Number:IRFB4115PbF

Product Description: Programmable IC Chips are integrated circuits that can be used to create a wide range of applications, from simple logic gates to complex systems. They are typically made up of a combination of transistors, diodes, resistors and other ...

Brand Name:Infineon

Model Number:IRFR5305TRPBF

Place of Origin:Original Factory

... techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and