900 a dual igbt module medium power

Brand Name:Original Factory

Model Number:FF900R12ME7PB11

Place of Origin:CN

...Operating Temperature: -40°C ~ 175°C (TJ) Type: IGBTs - Modules Supplier Device Package: AG-ECONOD Features Of FF900R12ME7PB11 Highest power density Best-in-class VCE sat Tvj op = 175°C overload Improved terminals Optimized creepage distance for 1500 V

Brand Name:Infineon

Model Number:FF200R17KE4HOSA1

Place of Origin:Germany

...-emitter saturation voltage: 2.3 V Continuous collector current at 25 C: 310 A Gate-emitter leakage current: 100 nA Pd-power dissipation: 1250 W Package / Box: Module Minimum working temperature: - 40 C Maximum working temperature: + 150 C

Brand Name:Huarui

Model Number:1600KW

Place of Origin:China

IGBT dual-tuble module cabinet, eliminating the current-limiting inductor of thyristor inverter, widely save the consumption of power. The energy consumption will be cut over 5% compared with the thyristor cabinet. IGBT dual-tuble module cabinet is stable...

Brand Name:ONSEMI

Model Number:BD135

Place of Origin:Original

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ...

Brand Name:Quectel

Model Number:RG255C-GL

Place of Origin:China

Overview RG255C-GL M.2 is a 5G sub-6 GHz M.2 module. Based on 3GPP Rel-17 RedCap technology, with features of 5G LAN*/ URLLC/ Slicing, the module supports a theoretical peak data rate of 223 Mbps downlink and 123 Mbps uplink. The module supports LTE Cat...