avalanche energy specified hv mosfet

Brand Name:Lingxun

Place of Origin:China

Avalanche Energy Specified High Voltage MOSFET For Converters *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, svg {display: ...

Brand Name:Infineon Technologies

Model Number:IPD60R180P7SAUMA1

Place of Origin:Multi-origin

...RDS (on) of 0.0015Ω, an ID of 60A and an avalanche energy rating of 8mJ. Key Features: • N-Channel Power MOSFET • RDS (on) of 0.0015Ω • ID of 60A • Avalanche Energy Rating of 8mJ • RoHS Compliant • Pb-Free Why buy from us >>> Fast / Safely /

Brand Name:Anterwell

Model Number:2SK3683

Place of Origin:original factory

...MOSFET SuperFAP-G series Target Specification 2SK3683-01MR (500V/0.38Ω/19A) 1) Package TO-220F15R 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Characteristics Symbol Rating Unit Drain−source voltage VDS 500 V Continuous Drain Current ID ±19 A Pulsed Drain Current ID(pulse) ±76 A Gate-Source Voltage VGS ±30 V Repetitive and Non-Repetitive Maximum Avalanche Current IAR 19 A Non-Repetitive Maximum Avalanche Energy...

Model Number:IRF9540

Place of Origin:original factory

..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and

Brand Name:ON Semiconductor

Model Number:FDPF44N25T

Place of Origin:Shenzhen, China

...MOSFET N-CH 250V 44A 3-Pin(3+Tab) TO-220FP Tube Description : UniFETTM MOSFET is Fairchild Semiconductor's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy...

Brand Name:Infineon

Model Number:IRFB4227PBF

Place of Origin:China

...tems andnbsp; Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications Low QG for

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

...Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy...

Brand Name:Microchip

Model Number:APT50M60L2VRG

Place of Origin:USA

...MOSFET Product Description: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. Application: • TO-264 MAX Package • Avalanche Energy...

Brand Name:Maplesemi

Model Number:SLH60R080SS

Place of Origin:Original

... MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and ...

Brand Name:Aerospace Power

Model Number:YX2

Place of Origin:China

...HV compact three-phase asynchronous motor Overview frame number: 355～560mm; power range: 185 ~ 1800kW; number of poles: 2-8P; voltage: 3000V, 6000V, 10000V (or user-specified); protection class: IP54, IP55; insulation grade: F; cooling mode: IC411, with the efficiency value meeting the energy...

Brand Name:Original Factory

Model Number:IPQC60R040S7XTMA1

Place of Origin:CN

... distinctive increase of energy efficiency. Specification Of IPQC60R040S7XTMA1 Part Number IPQC60R040S7XTMA1 Gate Charge (Qg) (Max) @ Vgs 83 nC @ 12 V Vgs (Max) ±...