bipolar transistors 200ma 160v

Brand Name:JSCJ

Model Number:MMDT5551

Place of Origin:N/A

MMDT5551 Bipolar Transistors BJT 200mA 160V List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND CKCA43C0G1H220KT010N TDK ADP3207JCPZ ADI LM809M3X-4....

Brand Name:ON

Model Number:MMBT5551LT1G

Place of Origin:ON

...Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: ...

Place of Origin:US

Brand Name:Original

Model Number:2SC2383

... Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 200mA, 5V...

Brand Name:original

Model Number:SST3906T116

Place of Origin:original

SST3906T116 Original SMD / SMT Bipolar Transistors - BJT 40V 200MA Features ●BVCEO> -40V(Ic=-1mA) ●Complements the SST3904 ●Low capacitance. FAQ Q: Can you accept small order? A: Yes,small order is available .Please contact with us. Q: Do you provide ...

Model Number:TIP41C

Place of Origin:China

Brand Name:original

...transistor bipolar NPN 100V 65W 6A Bipolar transistor TIP41C Products Description: 1.TIP41C single transistor bipolar, NPN, 100 V, 65 W, 6 A, 75 hFE 2. TIP41C, NPN transistor, 6 A, Vce=100 V, HFE:15, 3-pin to-220 package 3.Trans GP BJT NPN 100V 6A 65000mW 3-Pin(3+Tab) TO-220AB Tube 4.The TIP41C is a base island technology NPN power transistor...

Model Number:A1837

Place of Origin:United States

Brand Name:Original

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Brand Name:Toshiba

Model Number:2SC5200

Place of Origin:Original

...Transistor 230V 15A 150W Mosfet Bipolar Transistor Power Amplifier Applications • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Applications • power amplification Date Sheet Product Attribute Attribute Value Product Category: Bipolar Transistors - BJT Mounting Style: Through Hole Package / Case: TO-3P-3 Transistor...

Brand Name:Microchip / Microsemi

Model Number:JAN2N2222A

Place of Origin:ORIGINAL

JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single ...

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ...

Brand Name:Anterwell

Model Number:BC817-25

Place of Origin:original factory

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:2N5401

TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2N5401...

Brand Name:onsemi

Model Number:MMUN2233LT1G

Place of Origin:USA

... Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors Mfr onsemi Series - Product Status Active Transistor ...

Brand Name:ON

Model Number:NJW0302G

Place of Origin:USA

...Bipolar Transistors 15A 250V 150W NJW0281G 250V 15A 150W hfe75-150 and NJW0302G 250V 15A 150W hfe75-150 are pair. 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 150 WATTS These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors...

Brand Name:Original

Model Number:BFT92

Place of Origin:Original

BFT92 Bipolar Transistors - BJT Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION Part number # BFT92 is manufactured by Infineon Technologies and distributed by Jalixin. As one of the leading distributors of electronic products, we carry man...

Brand Name:original

Model Number:BCX53

Place of Origin:Original Factory

...BIPOLAR TRANSISTOR ELECTRONIC COMPONENTS SURFACE MOUNT,STANDING Package Type: Surface Mount,Standing Warranty: Global 180 Days Return Shipment: DHL,TNT Package: Standard Package High Light: BCX53 Bipolar Transistor , Bipolar Transistor Electronic Components BCX53 Bipolar Transistor...

Brand Name:General Electric

Model Number:DS200IIBDG1AEA

Place of Origin:United States

... a status of the processing of the board. The LEDs are visible from the interior of the circuit board cabinet and are red in color when lit. The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A has several connectors and when you

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF15060S

Quick Detail: MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS Description: Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ...

Brand Name:KRUNTER

Model Number:KUP40H12R4-7M

Place of Origin:CHINA

...Bipolar Transistor Assembly The Ultimate Solution for Power Management Product Description: The Insulated Gate Bipolar Transistor Module, commonly known as IGBT Module, is a crucial component in electronic circuits, offering efficient power control and switching capabilities. This versatile module combines the features of an Insulated Gate Transistor...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: High Power IGBT is a type of high power bipolar transistor, specifically a type of insulated-gate bipolar transistor (IGBT). It is an advanced semiconductor device with an excellent combination of low conduction losses, high switching ...

Brand Name:ON Semiconductor

Model Number:MMBT2907ALT1G

Place of Origin:China

...andamp; Switching andnbsp; Features 1:Transistor Type: PNP Bipolar (BJT) 2:Voltage Rating: 60V Vandlt;subandgt;CEOandlt;/subandgt; 3:Current Rating: 600mA Continuous Iandlt;subandgt;Candlt;/...