discrete devices super junction mosfet

Brand Name:Lingxun

Place of Origin:China

...t it can handle the toughest working conditions with ease. This makes it an incredibly reliable and rugged device that you can count on to perform well over time. Another standout feature of the Super Junction MOSFET is its much lower Ron*A performance,

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Ultra-low Junction Capacitance Power Discrete Devices Super Junction MOSFET/SJ MOSTET *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-...

Brand Name:Infineon

Model Number:IPB018N10N5ATMA1

Place of Origin:USA

Discrete Semiconductors IPB018N10N5ATMA1 PG-TO263-3 MOSFET Product Description: MOSFET OptiMOSTM5Power-Transistor,100V Features​: •Idealforhighfrequencyswitchingandsync.rec. •N-channel,normallevel •OptimizedforFOMOSS •Verylowon-resistanceRDS(on) •175°...

Brand Name:Infineon

Model Number:SPA04N80C3XKSA1

Place of Origin:China

SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS & Industrial Drives Features New ...

Brand Name:FUJI

Model Number:FMV06N90E FMH06N90E

Product Description 06N90E FMV06N90E FMH06N90E Mosfet 900V 6A TO 220F Electronic components 06N90E FMV06N90E FMH06N90E Mosfet 900V 6A TO 220F Product Technical Specifications Part number FMV06N90E FMH06N90E Base part number 06N90E EU RoHS Compliant with ...

Brand Name:TI

Model Number:AO4884

Place of Origin:China

Transistors - FETs IC Chip AO4884 Mosfet Array 2 N-Channel (Dual) 40V 10A 2W Surface Mount 8-SOIC PRODUCT DESCRIPTION Part number AO4884 is manufactured by TI Technologies and distributed by Stjk. As one of the leading distributors of electronic products...

Categories:Discrete Semiconductors

Country/Region:china

... Powercube Semi middle voltage mosfet For health care,wireless charger Applications: health care, wireless charger PSF70060B is PowerCubeSemi’s second generation of high voltage Super Junction MOSFET with FRD that is utilizing charge balance technology for ...

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Brand Name:Anterwell

Model Number:TK10P60W

Place of Origin:original factory

MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ...

Brand Name:Infineon Technologies

Model Number:IRF5801TRPBF

Place of Origin:Multi-origin

... range of applications. The device features a maximum drain source voltage of 100V, a maximum drain current of 15.8A, and a maximum power dissipation of 240W. The device also offers a maximum junction temperature of 175℃, an excellent RDS(on) of 1.4mΩ,

Brand Name:Maplesemi

Model Number:SLH60R080SS

Place of Origin:Original

...MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices...

Brand Name:Original Factory

Model Number:MSCSM170AM23CT1AG

Place of Origin:CN

...ultra-low weight, and low junction to case thermal resistance. Specification Of MSCSM170AM23CT1AG Part Number: MSCSM170AM23CT1AG Drain-Source ON Resistance: 15 MΩ Power Dissipation: 862W Output ...

Brand Name:MOLEX

Model Number:2137192081

Place of Origin:USA

...Discrete Semiconductor is one of the most popular electronic components for a variety of applications. It includes a wide range of products, such as rectifiers, diodes, SC-63 and SMA transistors, MOSFETs and other devices. These devices can be used in electrical power systems, automotive, consumer electronics, industrial and medical applications. Discrete...

Brand Name:Hua Xuan Yang

Model Number:HXY4409

Place of Origin:ShenZhen China

... application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

Model Number:TK10P60W

Place of Origin:original factory

MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ...

Brand Name:XUYANG

Model Number:K200

Place of Origin:China

... current trigger device,itcanconduct high surge current/pulse current. Feature: 1. Plastic package has Underwriters Laboratory Flammability Classification 94V-0 2. High ...

Brand Name:JUYI

Model Number:JY11M

Place of Origin:China

... cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Place of Origin:Malaysia

Brand Name:IR

Model Number:IRF7220PBF

...MOSFET Specifications: Datasheets IRF7220PbF Product Photos 8-SOIC Design Resources IRF7220 Saber Model IRF7220 Spice Model PCN Obsolescence Multiple Devices 14/Dec/2012 Standard Package 4,000 Category Discrete Semiconductor Products Family FETs - Single Series HEXFET® Packaging Tape & Reel (TR) FET Type MOSFET...

Brand Name:Original

Model Number:DMP2035U-7

Place of Origin:Original

... Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Product Attribute Attribute Value Product Category: MOSFET RoHS: Details

Brand Name:Upperbond

Model Number:Maker

Place of Origin:China

...one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. 1. MOSFET The metal–oxide–semiconductor field-effect transistor (MOSFET), also