enhanced reliability mosfet basic electronics

Brand Name:Vishay Siliconix

Model Number:IRF840APBF

Place of Origin:original

IRF840APBF MOSFET High-Performance Power Electronics for Enhanced Reliability and Efficiency FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: The High Power MOSFET is an advanced semiconductor device designed to meet the demanding requirements of modern electronic applications. As a vital component in various high-performance systems, this HV MOSFET stands out due to its ...

Brand Name:DIODES

Model Number:ZXMP10A17E6TA

Place of Origin:Original

ZXMP10A17E6TA 100V P-CHANNEL ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functions...

Brand Name:Original Factory

Model Number:DMT47M2SFVWQ

Place of Origin:CN

... QG × RDS(ON) product (FOM) and low RDS(ON). The low RDS(ON) ensures that the on-state losses are minimal. This MOSFET assures reliable and robust end application due to 100% unclamped inductive switching and test in production. DMT47M2SFVWQ MOSFET is

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:10G03S

10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other...

Brand Name:BigFlier

Model Number:F-300V-300A-A

Place of Origin:ShenZhen

Drone Motor Esc 300V 300A Brushless Esc With Reverse Function for Air​ Basic information: Voltage Current Size(mm) weight(g) BEC (Volts/Amps) Box Programming support Computer Programming support Firmware update 40-300V 300A 225*180*50 1940g NO BEC Yes Yes ...

Brand Name:weiaipu

Model Number:VIP3

Place of Origin:Shenzhen

Product Description: With a frequency range of 50Hz-60Hz, this EMI Power Filter is ideal for use in a wide range of applications, from home appliances to industrial machinery. Its dielectric strength of 1500VAC for 1 minute ensures that it can withstand ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVMS5P02

...MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic...

Brand Name:original

Model Number:BSS138K

...MOSFET BSS138K, 220 mA, Vds=50 V, 3-Pin SOT-23 Package Enhancement mode field effect transistors (FETs) are produced using Fairchild's patented high cell density DMOS technology. This high-density process is designed to minimize on-state resistance, providing robust and reliable performance and fast switching. Fairchild offers a large portfolio of MOSFET

Brand Name:Anterwell

Model Number:AP4511GD

Place of Origin:original factory

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer with the best ...

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

...MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability...

Brand Name:JUYI

Model Number:JY4N8M

Place of Origin:China

...Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable...

Brand Name:Infineon

Model Number:BSO200P03SHXUMA1

Place of Origin:Shenzhen, China

Electronic Components Trans MOSFET P-CH 30V 7.4A Automotive 8-Pin DSO T/R BSO200P03SHXUMA1 Integrated Circuits Technical Specifications : PCB changed 8 Package Width 4(Max) Package Height 1.65(Max) Package Length 5(Max) Lead Shape Gull-wing Mounting Surface Mount Product Category Power MOSFET Process Technology OptiMOS Configuration Single Quad Drain Triple Source Channel Mode Enhancement...

Brand Name:INFINEON

Model Number:IRF7342TRPBF

Product Introduction of Infineon IRF7103TRPBF N-Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-...

Categories:Electronic Safe Lock

Country/Region:china

Basic Model Electronic Combination Lock – A High-Security Solution for Safes and Export Gun Cabinets This product is a basic model electronic combination lock that integrates an electronic password system with a mechanical bolt design, suitable for various types of safes and common export gun cabinets. With its robust structure and high-security performance, it is widely used in homes, offices, and firearm storage equipment, providing reliable

Brand Name:TOSHIBA

Model Number:TK7A90E,S4X

制造商: Toshiba 产品种类: MOSFET RoHS: 详细信息 技术: Si 安装风格: Through Hole 封装 / 箱体: TO-220-3 晶体管极性: N-Channel 通道数量: 1 Channel Vds-漏源极击穿电压: 900 V Id-连续漏极电流: 7 A Rds On-漏源导通电阻: 1.6 Ohms Vgs - 栅极-源极电压: - 30 V, + 30 V Vgs th-栅源极阈值电压: 4 V Qg-栅极电荷: 32 nC 最小工作温度: - 55 C �...

Brand Name:JUYI

Model Number:JY4P7M

Place of Origin:China

... and effectively minimizes on‐resistance through the utilization of cutting-edge trench processing techniques. Additionally, the device features low gate charge, further enhancing its performance.ents. Get more

Categories:Interface ICs

Country/Region:china

...Electronic Component provider from China——GS Electronics, Product Description: The ADUM1250ARZ is a highly versatile and reliable digital isolator designed to provide enhanced safety and noise immunity for a wide range of applications. With its advanced features and robust design, this product offers superior performance and protection for sensitive electronic...

Brand Name:Upperbond

Model Number:Maker

Place of Origin:China

... are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. 1. Simplified Operation A transistor can use a small signal applied between