enhancement mode power igbt

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVMS5P02

...Power MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT...

Brand Name:onsemi

Model Number:FDS86267P

Place of Origin:original

FDS86267P High Performance N-Channel Enhancement Mode Power MOSFET for Power Electronics Applications 8-SOIC 150V Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous ...

Brand Name:Original Factory

Model Number:IGLR60R340D1XUMA1

Place of Origin:CN

...Enhancement Mode Power Transistor Product Description Of IGLR60R340D1XUMA1 IGLR60R340D1XUMA1 is 600V CoolGaN Enhancement Mode Power Transistor. Specification Of IGLR60R340D1XUMA1 Vgs(th) (Max) @ Id 1.6V @ 530µA Vgs (Max) -10V Input Capacitance (Ciss) (Max) @ Vds 87.7 pF @ 400 V Power...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:SRF6S19140HS

SRF6S19140HS is a N-Ch Enhancement Mode Power MOSFET. Part NO: SRF6S19140HS Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega ...

Brand Name:JUYI

Model Number:JY8N5M

Place of Origin:China

... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details

Brand Name:Hua Xuan Yang

Model Number:NCE01P18D

Place of Origin:ShenZhen China

NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET

Brand Name:APEC

Model Number:AP4953GM

Place of Origin:Original Factory

INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. 　AP4953GM Manufacturer 　APEC supply ability 　3000 datecode 　2007+ package SOP　 remark new...

Brand Name:JUYI

Model Number:JY4N8M

Place of Origin:China

...Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power...

Brand Name:Anterwell

Model Number:AP4511GD

Place of Origin:original factory

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer wit...

Model Number:AP4511GD

Place of Origin:original factory

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer wit...

Brand Name:juyi

Model Number:JY8N5M

Place of Origin:China

General Description: The product utilizes the advanced planar processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ...

Place of Origin:US

Brand Name:Original

Model Number:AP95T07GP

Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ...

Place of Origin:China

Brand Name:power-sem

Model Number:PSHI 0622

...IGBT driver ● Suitable for all IGBTs up to 1200V/1700V ● Half-bridge mode select,also two independent single drives ● Short circuit and over current protection by VCEsat monitoring ● Isolation due to nanometer amorphous transformer ● Supply undervoltage protection (<12.5V) ● Error memory ●Error "soft turn-off" ● Driver interlock top/bottom in half-bridge mode ● Dead time adjustable ● Internal isolated DC/DC power...

Brand Name:GEO (GEAO Technology)

Model Number:5V 40A Switched Mode Power Supply (KGDY)

Place of Origin:China

...Chat:szjiaokeji Email:network@szjiao.com 5V 40A Switched Mode Power Supply For Cheap Digital Photo Frame Car Cigarette Lighter Sweeper Led Features: 1.Enhanced Structural Integrity Internally, meticulous arrangement ensures clarity and coherence, while the

Brand Name:xingtongli

Model Number:GKD12-7000CVC

Place of Origin:China

... for voltage stabilization: Switch knob turn on and off repeatedly to a certain time interval, when the switch is turned on, the input power supply through switch knob and filter circuit to supply loading, during the entire switch turn on duration, the

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Power IGBT High Power Insulated Gate Bipolar Transistor (IGBT) is a high voltage device used in many applications, such as on-board chargers, welding machines, switching power supplies, photovoltaic inverters, energy storage, and more. With a current density of 400A/cm² and a faster switching speed, High Power IGBT offers a reliable and efficient solution for these applications. High Power IGBT...

Brand Name:Diodes Incorporated

Model Number:BS816A-1

Place of Origin:USA

...ENHANCEMENT MODE DMOS TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor technology ● High power

Brand Name:Freescale

Model Number:MRF6V2150NBR1

Place of Origin:USA

MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • ...

Brand Name:Fuji

Model Number:6MBP20RTA-060

Place of Origin:Japan

...IGBT Module 6MBP20RTA-060 Power Igbt Module New In Orginal Packing Fuji Products: FUJ/YE FUJI T&R FUJ/MO FUJI XERO FUJTSU Fuji Electric Corp of America Fuji/NEW Fuji Device Technology America FCA FUJI SKT Company Advantage: We are the largest stockists & importers of power semiconductors. We offer immediate quotes & ex-stock deliveries for standard igbt's & power...