enhancement mode transistor mosfet

Brand Name:onsemi

Model Number:NVR5198NLT1G

Place of Origin:original

NVR5198NLT1G MOSFET Power Electronics TO-236-3 Package N-Channel Enhancement Mode Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 1.7A (Ta) Drive ...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MRF6VP3450HR5

MRF6VP3450HR5 is a RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET. Part NO: MRF6VP3450HR5 Brand: FSL Date Code: 322+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVMS5P02

...MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor...

Brand Name:Hua Xuan Yang

Model Number:NCE01P18D

Place of Origin:ShenZhen China

NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET

Brand Name:Anterwell

Model Number:AP4511GD

Place of Origin:original factory

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer wit...

Model Number:AP4511GD

Place of Origin:original factory

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer wit...

Brand Name:JUYI

Model Number:JY14M

Place of Origin:China

JY14M N Channel Enhancement Mode Power MOSFET General Description Incorporating state-of-the-art trench processing techniques, the JY14M power field transistor operates with high cell density, resulting in reduced on-resistance and boasting a high ...

Brand Name:Original Factory

Model Number:IGLD60R070D1AUMA3

Place of Origin:CN

... N-Channel 600V 15A Enhancement Mode Transistor 8-LDFN Product Description Of IGLD60R070D1AUMA3 IGLD60R070D1AUMA3 is N-Channel 600V 15A Enhancement Mode Transistor. Feature Of IGLD60R070D1AUMA3 Enhancement mode transistor – Normally OFF switch Ultra ...

Brand Name:JUYI

Model Number:JY4P7M

Place of Origin:China

‐40V/‐70A P Channel Enhancement Mode Power MOSFET JY4P7M for High Current Load GENERAL DESCRIPTION The JY4P7M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These ...

Brand Name:APEC

Model Number:AP4953GM

Place of Origin:Original Factory

INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. 　AP4953GM Manufacturer 　APEC supply ability 　3000 datecode 　2007+ package SOP　 remark new...

Place of Origin:US

Brand Name:Original

Model Number:AP95T07GP

Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ...

Brand Name:JEUNKEI

Model Number:JY4N8M

Place of Origin:China

General Description: Features: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable ...

Brand Name:Freescale

Model Number:MRF6V2150NBR1

Place of Origin:USA

MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD ...

Categories:RF Transistors

Country/Region:china

SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Manufacturer: POLYFET Product Category: MOSFETs RoHS: Details Technology:- Mounting Style: SMD/SMT Package / Case:- - Transistor Polarity:- - Number of Channels:- - Vds - Drain-Source Breakdown ...

Brand Name:Diodes

Model Number:DMN26D0UFB4-7

Place of Origin:UAS

DMN26D0UFB4-7 Diodes MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of ...

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

...power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at ...

Brand Name:original

Model Number:DMN5L06DWK7

Place of Origin:original

DMN5L06DWK7 MOSFET Dual N Channel 2 Channel Small Signal kdk smd transistors surface mode transistors Features  Dual N-Channel MOSFET  Low On-Resistance (1.0V Max)  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low ...

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage...

Brand Name:Diode Triode Transistor

Model Number:MBRF30100VT+

Place of Origin:USA

...Transistor Mosfet Diode Array 600V 15A To247 MBRF30100VT+ Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor Polarity: N-Channel Product Type: MOSFET...