f die dynamic random access memory

Brand Name:SAMSUNG

Model Number:K4B2G1646F-BCMA

Place of Origin:KR

Dynamic Random Access Memory DRAM 2Gb F-die DDR3 SDRAM X16 K4B2G1646F-BCMA JEDEC standard 1.5v + 0.075V Power Supply VDoo = 1.5V + 0.075V 400 ...

Brand Name:Original Factory

Model Number:MT53E512M32D1ZW-046 WT:B

Place of Origin:CN

... memory. It is internally configured as an 16-bank (4-banks per Bank Group) DRAM. Specification Of MT53E512M32D1ZW-046 WT:B Part Number: MT53E512M32D1ZW-046 WT:B Memory Format: DRAM Memory Size: 16Gbit Memory Interface: Parallel Write Cycle Time - Word,

Brand Name:Micron Technology

Model Number:MT53D1024M32D4DT-053 AIT:D

Place of Origin:USA

MT53D1024M32D4DT-053 AIT:D Micron DRAM LPDDR4 32G 1GX32 FBGA QDP VFBGA-200 MT53D1024M32D4DT-053 AIT:D TR MT53D1024M32D4DT-053 AAT:D MT53D1024M32D4DT-053 AAT:D TR Manufacturer: Micron Technology Product Type: Dynamic Random Access Memory Type: SDRAM Mobile...

Brand Name:Original

Model Number:AS4C32M16SC-7TIN

Place of Origin:Original

AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage Features •Fast clock rate: 133 MHz • Programmable Mode registers - CAS Latency: 1 or 2 or 3 - BurstLength:1,2,4,8,or fullpage - ...

Brand Name:SKHYNIX

Model Number:H9HCNNNBPUMLHR- NMO

Place of Origin:KOREA

H9HCNNNBPUMLHR NMO Four generations of low power double data rate synchronous dynamic random access memory Product Usage LPDDR is arguably the most widely used "working memory" memory for mobile devices worldwide. Low Power Double Data Rate SDRAM, a type...

Brand Name:MICRON

Model Number:MT53D512M32D2DS-053 AIT:D

Place of Origin:Shenzhen,China

MT53D512M32D2DS-053 AIT:D IC Electronic Components Dynamic random access memory Product description Part number MT53D512M32D2DS-053 AIT:D is manufactured by MICRON Company and distributed by AYE. As one of the leading distributors of electronic products...

Place of Origin:original

Brand Name:original

Model Number:W9825G6KH-6

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Place of Origin:PHILIPPINE

Brand Name:Integrated Silicon Solution, Inc

Model Number:IS41LV16100B-60KL

...DYNAMIC RAM WITH EDO PAGE MODE Quick Detail: 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE Description: The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access...

Brand Name:Micron Technology Inc.

Model Number:MT46V16M16P-5B:M

Place of Origin:original

... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to operate on a 5.0V supply and is fabricated using the fast and low power ...

Brand Name:Hynix

Model Number:Hynix Memory IC

Place of Origin:South Korea, China

...flash memory chips. Hynix is the world's second-largest memory chipmaker and the world's 3rd-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Electronics, the company has manufacturing ...

Brand Name:Alliance Memory, Inc.

Model Number:AS4C2M32SA-6TCN

Product Details Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with ...

Brand Name:WEJOIN

Model Number:WJTS211

Place of Origin:Shenzhen, China

...Access Control Tripod turnstile Turnstile Gate Functions and Features: 1. 304 stainless steel: Anti-rust, wear-resistant, high temperature resistant, and corrosion resistance 2. Molded Tripod Turnstile Mechanism: Die-cast aluminum integral molding, special paving treatment 3. Pedestrian passage gate main board: Dynamic arrow lights guide traffic, Dry contact signal, Support fire signal access, Memory...

Brand Name:MDTIC

Model Number:MT41J128M16HA-15E-D

Place of Origin:Original

... bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • CAS (READ) latency (CL):

Brand Name:GE Fanuc

Model Number:IC752SPL014

Place of Origin:USA

... Memory (DRAM) is split between the operating system, an object store, and application memory. Additionally, a section of Non-volatile Random Access Flash Memory (NOVRAM), functioning as a virtual hard drive, is divided between the operating system and

Brand Name:MDTIC

Model Number:MT41J128M16HA-15E-D

Place of Origin:Original

... bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • CAS (READ) latency (CL):

Brand Name:MICRON

Model Number:MT48LC4M16A2TG

Place of Origin:Original

... – 4 Meg x 4 x 4 banks GENERAL DESCRIPTION The Micron® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quadbank DRAM with a synchronous interface (all signals are registered on the ...

Brand Name:Ironman

Model Number:IM.S101A

Place of Origin:China

..., and corrosion resistance 2. Molded Tripod Turnstile Mechanism: Die-cast aluminum integral molding, special paving treatment 3. Pedestrian passage gate main board: Dynamic arrow lights guide traffic, Dry contact signal, Support fire signal access, Memory