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All fet transistor symbol wholesalers & fet transistor symbol manufacturers come from members. We doesn't provide fet transistor symbol products or service, please contact them directly and verify their companies info carefully.
| Total 54 products from fet transistor symbol Manufactures & Suppliers |
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Brand Name:Original Factory Model Number:IPP65R050CFD7A Place of Origin:CN ...220-3, Through Hole. Specification Of IPP65R050CFD7A Part Number IPP65R050CFD7A FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Place of Origin:US Brand Name:Original Model Number:AOD478 Product Detail Packaging Cut Tape (CT) Part Status Discontinued at Digi-Key FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta), 11A (Tc) Drive Voltage (Max Rds On, Min Rds... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Model Number:MRF150 Place of Origin:Malaysia Brand Name:KAIGENG MRF150 N/A Electronic Components IC MCU Microcontroller Integrated Circuits MRF150 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:... |
Shenzhen Kaigeng Technology Co., Ltd.
Guangdong |
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Brand Name:RENESAS Model Number:2SK1305 Place of Origin:Japan ...Transistor 2SK1305 Silicon N Channel MOS FET IC Components Original Transistor 2SK1305 Silicon N Channel MOS FET TO-3P Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline Absolute Maximum Ratings Item Symbol... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:CANYI Model Number:SI2301 Place of Origin:Guangdong, China ...FETs SOT-23 MOS power field effect transistor 2.5A 20V A1SHB P-channel Enhancement Mode Features: Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Maximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted) Parameter Symbol... |
Shenzhen Canyi Technology Co., Ltd.
Guangdong |
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Model Number:2N4093 Place of Origin:original factory N-CHANNEL J-FET Qualified per MIL-PRF-19500/431 2N4091 2N4092 2N4093 ABSOLUTE MAXIMUM RATINGS (TA = +25℃ unless otherwise noted) Parameters / Test Conditions Symbol Value Units Gate-Source Voltage VGS -40 V Drain-Source Voltage VDS 40 V Drain-Gate Voltage ... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:Diodes Model Number:DMT6009LSS-13 Place of Origin:CHINA ...Transistors FETS MOSFET N-CH 60V 10.8A 8SO T&R 2 Discrete Semiconductor DMT6009LSS-13 Specification : Part number DMT6009LSS-13 Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series - Package Tape & Reel (TR) Part Status Active FET... |
Angel Technology Electronics Co
Hongkong |
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Model Number:TIP102 ...Transistor is a Darlington transistor with an integrated damping diode, designed for high-gain circuits. It is suitable for applications requiring significant current amplification. Product Attributes Brand: MNS Type: NPN Silicon Transistor Package: TO-220 Technical Specifications Parameter Symbol Symbol... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Brand Name:Fuji Electric Model Number:FLM0910-25F Place of Origin:JP FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Place of Origin:Original NTZD3154NT1G Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 540mA Rds On (Max) @ Id, Vgs 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Brand Name:Onsemi Model Number:FDV303N Place of Origin:USA FDV303N Digital FET N-Channel Onsemi RF Transistors Manufacturer: onsemi Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source... |
Wisdtech Technology Co.,Limited
Guangdong |
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Brand Name:VBE Model Number:VBE10R5 Place of Origin:CHINA Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz |
VBE Technology Shenzhen Co., Ltd.
Guangdong |
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Brand Name:ON Model Number:NTTFS3A08PZTAG Place of Origin:America NTTFS3A08PZTAG Transistors FETs MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel ... |
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
Guangdong |
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Brand Name:Analog Devices Inc. Model Number:HMC442LC3BTR Place of Origin:Multi-origin ... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low ... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Infineon Technologies/International Rectifier IOR Model Number:IRF1404ZPBF ... Hole TO-220AB Specification: Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) |
Guangzhou Topfast Technology Co., Ltd.
Guangdong |
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Place of Origin:ShenZhen China Brand Name:Hua Xuan Yang Model Number:2N3906 ...Transistors 2N3906 TRANSISTOR (NPN). FEATURE Ÿ PNP silicon epitaxial planar transistor for switching and Amplifier applications Ÿ As complementary type, the NPN transistor 2N3904 is Recommended Ÿ This transistor is also available in the SOT-23 case with the type designation MMBT3906 MAXIMUM RATINGS(Ta=25ć unless otherwise noted) Symbol... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Place of Origin:Taiwan Brand Name:Motorola, Inc Model Number:MRF136 Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. ... |
Mega Source Elec.Limited
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Brand Name:Huixin Model Number:MMBT3906 SOT-23 Place of Origin:China ...Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 MMBT3906 SOT-23 PNP Surface Mount Transistor MMBT3906 SOT-23 Datasheet.pdf FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommended Epitaxial Planar Die Construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol... |
Guangdong Huixin Electronics Technology Co., Ltd.
Guangdong |
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Brand Name:NEXPERIA Model Number:NX7002AK Place of Origin:CHINA NX7002AK NEXPERIA N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted D Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active SVHC Yes Automotive No PPAP No Product Category ... |
Sunbeam Electronics (Hong Kong) Limited
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Model Number:SMP3003-DL-1E Place of Origin:onsemi ... FETs, MOSFETs Mfr onsemi Series - Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Obsolete FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75 V Current - Continuous Drain (Id) |
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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