fets mosfets power transistors

Brand Name:Infineon

Model Number:IRF5210PBF

Place of Origin:Original Factory

...Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:SURINGMAX

Model Number:18 mosfets 35A

Place of Origin:CHINA

...power transistors for electric motorcycle 18 mosfets 35A controller 48-96v factory direct Specifications of our controller In order to better play the controller's performance and product stability, all of our controllers use imported power transistors. Rated voltage 48-96v Rated Power 800-2000w Color silver Mosfet 18 Model 18 mosfets...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRF1404ZPBF

... Hole TO-220AB Specification: Category Discrete Semiconductor Products 　 Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)

Brand Name:Original

Model Number:IPG20N06S4L14AATMA1

Place of Origin:Original

...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor

Place of Origin:Taiwan

Brand Name:Motorola, Inc

Model Number:MRF136

Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. ...

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Brand Name:INFINEON

Model Number:IPD90N06S4-04

Place of Origin:China

IPD90N06S4-04 TO-252 60V 90A FET MOSFET Silk screen 4N0604 Brand New and original Integrated Circuit chip PRODUCT DESCRIPTION Part number IPD90N06S4-04 is manufactured by INFINEON and distributed by Stjk. As one of the leading distributors of electronic ...

Brand Name:MACMIC

Model Number:MMF200ZB040DK1

Place of Origin:China

... Loss Low Forward Voltage High Surge Current Capability Low Inductance Package Applications Inversion Welder Uninterruptible Power Supply (UPS) Plating Power Supply Ultrasonic Cleaner and

Brand Name:UNICOMP

Model Number:AX9100

Place of Origin:China

130kV ±60° Unilateral Tilt ≤7μm Focus MOSFET Power Semiconductor Xray AX9100 Unicomp Internal Void Detector The AX9100 Unicomp Internal Void Detector is a high-precision X-ray ...

Brand Name:in

Model Number:STAV58010P2

Place of Origin:CN

Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor Description The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz. It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package. It can support CW...

Brand Name:Texas Instruments

Model Number:BQ26100DRPR

Place of Origin:N/S

NPN PNP Transistor Texas Instruments/TI BQ26100DRPR ECAD Module Build or Request PCB Footprint or Symbol Supply and Demand Status Balance Fake Threat In the Open Market 54 pct. Popularity High Is this a common-used part? Yes Win Source Part Number 011972-...

Brand Name:ML

Model Number:ML-309A

Place of Origin:China

Features: It is suitable for the forming of pipe-packaged power transistors, audions, and other electronic components of similar shape. *Its speed can be adjusted steplessly. It is easy to operate and maintain. Molds can be made upon the customer’s ...

Brand Name:Original Factory

Model Number:IPL60R225CFD7AUMA1

Place of Origin:China

...MOSFET Transistor FET Good Price Product Description IPL60R225CFD7AUMA1 offers a cost-optimized, 10mΩ low on-resistance RDS(on), enabling increased power density and minimized conduction losses. Features Of IPL60R225CFD7AUMA1 Highest efficiency with outstanding ease-of-use 1 performance tradeoff Enabling increased power...

Brand Name:UCHI

Model Number:3904W /3906W

Place of Origin:Dongguan China

... -These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. - Pb-Free Package is available. GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE...

Brand Name:Huixin

Model Number:BSS138

Place of Origin:China

...MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FEATURES 1.High density cell design for extremely low RDS(on) 2.Rugged and Relaible APPLICATIONS 1.Direct Logic-Level Interface: TTL/CMOS 2.Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors...

Brand Name:Infineon

Model Number:IPB018N10N5ATMA1

Place of Origin:USA

...-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Parameter Table: roduct Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS:

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:XHR

Model Number:RF-C692D

Place of Origin:Shenzhen,China

... AB 4 Way Powerful Car Subwoofers , 10 Inch Mosfet Slim Active Subwoofer 300W 10" slim subwoofer PWM MOSFET POWER SUPPLY CLASS A/B Technology 1 Channel High Performance Power Amplifier Active Subwoofer Slim Design for Under seat high power Full Aluminum...

Brand Name:Infineon Technologies

Model Number:BF999 E6327

Place of Origin:CHINA

BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode 1.Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications • Pb-free (RoHS compliant) package1) 2.Why choose us? ...

Brand Name:TeXin

Model Number:TX-50W

Place of Origin:Shenzhen China

.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects.