fets mosfets with high performance

Model Number:BCBF120N21M1

...high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power applications. It offers a 1200 V drain-to-source voltage and a continuous drain current of 100 A, with a low on-resistance of 21 m. This MOSFET provides significant benefits including system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high...

Brand Name:Original Factory

Model Number:IMZA65R083M1H

Place of Origin:CN

Integrated Circuit Chip IMZA65R083M1H Transistors FETs MOSFETs TO-247-4 Product Description Of IMZA65R083M1H IMZA65R083M1H is CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package. Specification Of ...

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:AD

Model Number:AD8065WARTZ

Place of Origin:brand new

...FET Op Amps optical integrated circuits AD8065WARTZ High Performance APPLICATIONS ►Automotive driver assistance systems ►Photodiode preamps ►Filters ►A/D drivers ►Level shifting ►Buffering FEATURES Wide supply voltage range: 5 V to 24 V Single-supply and rail-to-rail output Low offset voltage 1.5 mV maximum High...

Brand Name:Original brand

Model Number:STO33N60M6

Place of Origin:Original

Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • High creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boost PFC converters Categories Mosfet...

Brand Name:NXP Semiconductors

Model Number:SI2304DS,215

Place of Origin:China

...MOSFET with Ultra-Low 45mandOmega; RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs andnbsp; Features TrenchMOSandtrade; technology Very fast switching Subminiature surface mount package. andnbsp; Applications Battery management High...

Brand Name:WJ

Model Number:FP2189

Quick Detail: high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount Specifications: part no. FP2189 Manufacturer WJ　 supply ability 2643 datecode 05+ package SOT89　 remark new and original stock Competitive Advantage: ...

Brand Name:JUYI

Model Number:JY4P7M

Place of Origin:China

... device. It achieves a high cell density and effectively minimizes on‐resistance through the utilization of cutting-edge trench processing techniques. Additionally, the device features low gate charge, further enhancing its performance.ents. Get more

Brand Name:SURINGMAX

Model Number:6 mosfets 14A/17A

Place of Origin:CHINA

Powerful 14A/17A controller with 6 mosfets for electric bicycle with direct price Specifications of our controller In order to better play the controller's performance and product stability, all of our controllers use imported power transistors. Rated ...

Brand Name:SEMIKRON

Model Number:SKKT460/22E

Place of Origin:Germany

SEMIKRON SKKT460/22E H4 2300V IGBT Module The SEMIKRON SKKT460/22E H4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module that combines MOSFET high input impedance with bipolar transistor low conduction loss for precise, efficient power ...

Brand Name:Haida

Model Number:9007-HD

Place of Origin:China

... evaluation in components such as optocouplers, magnetic couplers, IGBTs, MOSFETs, isolation substrates, and capacitors. This system performs precise partial discharge (PD) and withstand voltage tests, with a voltage output range of 0.1–10 kV and

Model Number:KGS-M5840

Place of Origin:Japan

Brand Name:YAMAHA

Full Part Number PCB Mark Applicable Machine Board Function Version Remark KGS-M5840-000 KGS-M5840 YG100 / YG100II Head Servo Driver Board Original base version KGS-M5840-001 KGS-M5840 YG100 Standard Module 6-spindle head control Ver 1.0 KGS-M5840-002 KGS-...

Categories:Power Driver Modules

Country/Region:china

Power Driver Module MOSFET 1 Phase 40 A 31-PowerVFQFN Module

Brand Name:Original Factory

Model Number:IPL60R225CFD7AUMA1

Place of Origin:China

...MOSFET Transistor FET Good Price Product Description IPL60R225CFD7AUMA1 offers a cost-optimized, 10mΩ low on-resistance RDS(on), enabling increased power density and minimized conduction losses. Features Of IPL60R225CFD7AUMA1 Highest efficiency with outstanding ease-of-use 1 performance...

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

...o have China made high quality, if interested,pls contact us to get quote. Our company can supply all IRF Series, hot sale and in stock, wholesale will get good quote. Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) ...

Brand Name:Texas Instruments

Model Number:OPA657N/250

Place of Origin:USA

OPA657N/250 High Speed Operational Amplifiers 1.6GHz Low Noise FET-Input Op Amp Product Category: High Speed Operational Amplifiers RoHS: Details Series: OPA657 Number of Channels: 1 Channel GBP - Gain Bandwidth Product: 1.6 GHz SR - Slew Rate: 700 V/us ...

Model Number:SI8284DD-AS

... functions, ideal for driving Silicon Carbide (SiC) FETs, power MOSFETs, and IGBTs in inverter and motor control applications. Leveraging Skyworks' proprietary silicon isolation technology, these devices achieve up to 5.0 kVrms withstand ...

Brand Name:IR

Model Number:IRFM250

...MOSFET POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number RDS(on) ID IRFM250 0.100 Ω 27.4A IRFM250 JANTX2N7225 JANTXV2N7225 REF:MIL-PRF-19500/592 200V, N-CHANNEL HEXFET® MOSFET TECHNOLOGY Product Introduction The IRFM250 is a high-power N-channel MOSFET designed for various applications, including power supplies, motor control, and switching circuits. This MOSFET offers exceptional performance...

Brand Name:ST

Model Number:TIP122

Place of Origin:Original Factory

MOSFET Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance...