gan epitaxial substrate un doped

Brand Name:PAM-XIAMEN

Place of Origin:China

...Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial...

Brand Name:ZMKJ

Model Number:2INCH A-axis

Place of Origin:CHINA

... during the range of visible and near IR spectrum.It is widely used for led substrates for GaN Epitaxial growth ；and also as optical window in infrared and far infrared military equipments, apparatus and instruments of satellite and space technology, and

Brand Name:CSIMC

Model Number:ZnO wafer

Place of Origin:China

...substrate is used in GaN(blue LED) epitaxial substrate wide band connection devices and other fields Zinc oxide (ZnO) crystal substrate is widely used in GaN(blue LED) epitaxial substrate, wide band connected devices and other fields. Zinc oxide single crystal is a good substrate material for GaN...

Brand Name:ZMSH

Model Number:diamond substrate

Place of Origin:CHINA

customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area MPCVD method polytype Diamond substrate wafers for GaN epitaxial Diamond has wide band gap, high thermal conductivity, high breakdown field strength, high carrier ...

Brand Name:Crystro

Model Number:3inch SGGG/GGG

Place of Origin:China

Product Description: The Single Crystal Substrates offered in our product line are an essential component for various applications in the field of magnetic refrigeration, epitaxial film substrates, and substrate materials for YIG. These substrates are ...

Brand Name:Silian

Model Number:Customized

Place of Origin:Chongqing，China

..., mainly because it has been unable to find a substrate that matches the lattice constant of GaN, resulting in the density of defects in the epitaxial crystal. Too high, until 1991, Nichia Co. researcher S. Nakamura used low-temperature growth of an

Place of Origin:China

...GaN Substrates Dimensions:Ф 50.8 mm ± 1 mm Thickness:350 ± 25 µm Useable Surface Area:> 90% Orientation:C-plane (0001) off angle toward M-Axis 0.35°± 0.15° Orientation Flat:(1-100) ± 0.5°, 16.0 ± 1.0 mm Secondary Orientation Flat:(11-20) ± 3°, 8.0 ± 1.0 mm Total Thickness Variation:≤ 15 µm BOW:≤ 20 µm Conduction Type:N-type(Undoped); N-type(Ge-doped); Semi-Insulating(Fe-doped...

Brand Name:HMT

Model Number:4 inch

Place of Origin:China

... on a Silicon (111) substrate for power & RF applications.Each layer can be customized. The benifits of using GaN epi wafers: 5G-related RF devices, such as power amplifier High-efficiency power electronics devices, such as power supplies, ...

Brand Name:SIGNI

Model Number:SS

Place of Origin:CN

..., silicon wafer, gallium arsenide and GaN wafer. This kind of grinding wheel developed in out company can replace foreign products. They can be used steadily on the Japanese, Korean grinders with high ...