gan on sic semiconductor substrate

Brand Name:zmsh

Model Number:GaN-ON-SIC

Place of Origin:CHINA

...GaN-ON-SiC EPI layer wafers GaN-ON-Si EPI layer wafers About GaN-on-GaN GaN-on-SIC Feature Introduce GaN epitaxial wafer: According to the different substrates, it is mainly divided into four types: GaN-on-Si, GaN-on-SiC, GaN-on-sapphire, and GaN-on-GaN. GaN-on-Si: The current industry production yield is low, but there is a huge potential for cost reduction: because Si is the most mature, defect-free, and lowest-cost substrate

Brand Name:ZMKJ

Model Number:4inch GaN-sapphire

Place of Origin:China

2inch 4inch 4" Sapphire based GaN templates GaN film on sapphire substrate Properties of GaN Chemical properties of GaN 1) At room temperature, GaN is insoluble in water, acid and alkali. 2)Dissolved in a hot alkaline solution at a very slow rate. 3) NaOH...

Brand Name:HMT

Model Number:4 INCH

Place of Origin:China

GaN-on-SiC epi wafer supplier for RF application customized Homray Material Technology provide high quality GaN-on-SiC epitaxial wafer for RF application. We supply 4inch and 6 inch GaN on SiC epi wafer with semi-insulating SiC substrate. SiN passivation ...

Brand Name:ANG

Model Number:SIC-W05

Place of Origin:Guangdong, China

... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it

Brand Name:PAM-XIAMEN

Place of Origin:China

...semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN...

Brand Name:Original Factory

Model Number:IMZA120R014M1HXKSA1

Place of Origin:CN

Transistors IMZA120R014M1HXKSA1 1200V 14mΩ SiC Trench MOSFET TO247 package Description The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In ...

Brand Name:JOPTEC

Place of Origin:HEFEI, CHINA

With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but also a well alternative material for high temperature semiconductor devices...

Brand Name:Silian

Model Number:Customized

Place of Origin:China

Gallium Nitride on Sapphire Wafers (GaN) We grow are sapphire wafers using several methods Czrochroski (CZ) process is known to be more efficient for c-axis sapphire substrate production. Heat Exchanger Method (HEM) - Used to grow sapphire crystal in ...

Brand Name:OEM/High Broad

Model Number:Armor Ceramic

Place of Origin:China

...SIC ceramic tiles / silicon carbide ceramic plates/ boron carbide plates used in Bulletproof Vest Silicon carbide powders are used to manufacture hard ceramics, refractories, abrasives, and composite reinforcements. Single-crystal products are as used as compounds in semiconductor substrates...

Brand Name:BonTek

Model Number:Sapphire (Al2O3)

Place of Origin:China

Semiconductor Sapphire Wafer Sapphire Windows Piezoelectric Wafer Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. It is a superior window material for many IR applications from 3µm to 5µm. C-plane sapphire substrates are widely used to grow III-V and II-VI compounds such as GaN...

Brand Name:Ruideer

Model Number:Customizable

Place of Origin:China

... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

... applications . With an ideal crystal structure , ZnO wafer ( Zinc oxide ) has a 2% lattice mismatch to GaN , that is much less than the lattice mismatch of sapphire wafer and SiC wafer . ZnO wafer is one of the most suitable substrate for using as GaN