gan silicon substrate

Brand Name:PAM-XIAMEN

Place of Origin:China

...GaN Freestanding Hexagonal GaN Crystal Substrate PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density. PAM-XIAMEN offers full range of GaN and Related III-N Materials including GaN substrates...

Brand Name:ZMKJ

Model Number:JZ-4INCH-LNOI

Place of Origin:China

...Silicon LiNbO3 Lithium Niobate Wafer Thin Films Layer On Silicon Substrate Lithium niobate (LiNbO3) crystal is an important photoelectric material, and is widely used in integrated optics, nonlinear optics, optoelectronic components, and other fields, one of the most important substrate...

Brand Name:ZMSH

Model Number:AIN Template On Silicon

Place of Origin:China

.... The aluminum nitride ceramic has a low dielectric constant and excellent mechanical properties. It is non-toxic and has a linear expansion coefficient similar to that of silicon. In addition, it has low thermal conductivity. This combination of

Brand Name:DR

Model Number:DR-346

Place of Origin:Made in China

... Appearance Light yellow transparent liquid Viscosity, (25 °C ) 80-150 Cp Effective content 100% Characteristics: Organic silicon surfactants are used in

Brand Name:CSIMC

Model Number:ZnO wafer

Place of Origin:China

...substrate is used in GaN(blue LED) epitaxial substrate wide band connection devices and other fields Zinc oxide (ZnO) crystal substrate is widely used in GaN(blue LED) epitaxial substrate, wide band connected devices and other fields. Zinc oxide single crystal is a good substrate material for GaN...

Place of Origin:China

Brand Name:CRYLINK

Model Number:CRYLINK-ScAlMgO4 Crystal

...GaN and ZnO heteroepitaxy recently developed with the ideal substrate material, currently it match the GaN and ZnO best in the new substrate materials.ScAlMgO4 crystals are hexagonal system,which lattice constant a = 0.3246 nm, c = 2.5195 nm, with rhombohedron layered structure, similar to wurtzite nitrides and the structure of zinc oxide.ScAlMgO4 crystal is a kind of ideal substrate

Brand Name:Silian

Model Number:Customized

Place of Origin:Chongqing，China

..., mainly because it has been unable to find a substrate that matches the lattice constant of GaN, resulting in the density of defects in the epitaxial crystal. Too high, until 1991, Nichia Co. researcher S. Nakamura used low-temperature growth of an

Brand Name:ANG

Model Number:SIC-W05

Place of Origin:Guangdong, China

.... SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it

Brand Name:HMT

Model Number:4 inch

Place of Origin:China

... on a Silicon (111) substrate for power & RF applications.Each layer can be customized. The benifits of using GaN epi wafers: 5G-related RF devices, such as power amplifier High-efficiency power electronics devices, such as power supplies, ...

Brand Name:Original Factory

Model Number:LMG3425R050RQZR

Place of Origin:CN

Silicon Driver LMG3425R050RQZR Gate Drivers GaN FET With Integrated Driver​ Description LMG3425R050RQZR integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon...

Brand Name:JOPTEC

Place of Origin:HEFEI, CHINA

With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but also a well alternative material for high temperature semiconductor devices...

Brand Name:Xuyuan

Model Number:GaN Fast Charger

Place of Origin:China

...GAN USB C PD Charger, Ma-Book Pro Charger 3-Port PD3.1 Laptop Wall Charger For Chromebook, Tablet About this GaN fast charger 150W GAN II FAST CHARGING: This ultra-fast charging power adapter elevates charging performance by using the advantages of GaN II technology, delivering superior power density and efficiency when compared to conventional silicon...

Brand Name:OEM

Model Number:BS-C915

Place of Origin:China

....This is a charging technology that allows mobile chargers to charge five times faster while maintaining the same case size as traditional chargers.Now the heavy silicon-based charging design is quickly replaced by GAN FAST because of the

Brand Name:HT

Model Number:HT-BGW

Place of Origin:China

... selection of back grinding wheels. This particular grinding tool comes in two types: a silicon wafer back grinding wheel and an LED substrate back grinding wheel. Both of them can be used on different grinding machines made in Europe,America,Japan, and

Brand Name:SIGNI

Model Number:SS

Place of Origin:CN

..., silicon wafer, gallium arsenide and GaN wafer. This kind of grinding wheel developed in out company can replace foreign products. They can be used steadily on the Japanese, Korean grinders with high ...

Brand Name:wuxi special ceramic

Place of Origin:Made in China

..., it has high strength in both room temperature and high temperature condition, the strength of silicon nitride can be kept up to 1200ºC; the low coefficient of thermal expansion make it a ceramic material possessing excellent thermal shock resistance; at

Brand Name:KANGLIBANG

Model Number:KN-388

Place of Origin:Guangdong, China

...24S-2PA on the substrates. 3, Leave dry in room temp for 30 minutes or baking at 110-130℃ for 5-15minutes. 4, The primer treated substrates are processed within that day. 5, The first cure is suitable to DBPH system siliconerubber and the second cure the

Brand Name:ACASOM

Model Number:ACA-ISO-JAM2420S1

Place of Origin:Shenzhen

... is 1-2km. This product use the latest generation of power devices-gallium nitride(GAN), which uses a ceramic package and a copper gold-plated substrate process. This product also uses circulators and isolators, which greatly provides product stability.

Place of Origin:China

2 inch Free-Standing GaN Substrates Dimensions:Ф 50.8 mm ± 1 mm Thickness:350 ± 25 µm Useable Surface Area:> 90% Orientation:C-plane (0001) off angle toward M-...

Brand Name:Jinghui Ceramics

Model Number:Customized

Place of Origin:China

...semiconductor silicon material (3.5-4.0×10-6/℃); 2. High thermal conductivity ( up to 70 W/m.k) of Si3N4 ceramic, 3 times that of alumina ceramic substrate; 3. The bending strength is higher than that of the alumina substrate, which is twice that of the