gdx2 packer silicon transistor

Brand Name:Upperbond

Model Number:Maker

Place of Origin:China

... of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. Mechanism A voltage or current applied to one pair of the transistor's

Brand Name:Libre

Model Number:0BB701

Place of Origin:Chengdu

GDX1 GDX2 Packer Spare Parts 0BB701 Steel Knife Part Number Dimension Apply to 0BB701 420×62×3 mm GDX1 GDX2 For GD machine, we can manufacture spare parts for GDX1, GDX2, GDX6, GD550, GD121, GDX2000. Libre is a global supplier of tobacco machine spare par...

Brand Name:T O S

Model Number:2SC5242

Place of Origin:Japan

2SC5242 3 Pin Transistor NPN Epitaxial Silicon Transistor Original NPN Epitaxial Silicon Transistor 2SC5242 Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: ...

Brand Name:ON

Model Number:MJE340G

Place of Origin:USA

...Silicon Transistor 0.5A Power Transistor 300V 20W Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability • These Devices are Pb−Free and are RoHS Compliant* • Complementary to MJE350 • 0.5 AMPERE • Power Transistor • NPN Silicon...

Brand Name:Original

Model Number:MMBT5401

...Silicon Transistor MMBT5401 2L SOT-23 3000 pcs BJT PNP Transistor MMBT5401PNP GENERAL PURPOSE SWITCHING TRANSISTOR Voltage -150Volts Power 300mWatts MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking: 2L FEATURES *PNP epitaxial silicon...

Brand Name:T O S

Model Number:2SC5242

Place of Origin:Japan

2SC5242 3 Pin Transistor NPN Epitaxial Silicon Transistor Original NPN Epitaxial Silicon Transistor 2SC5242 Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:A92

SOT-89-3L Plastic-Encapsulate Transistors A92 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A92 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -310...

Place of Origin:China

..., and China National Tobacco Corp. As a domestic product, GD2-ch consists of an YB15 Tray Feeder, an YB45 Hinge-lid Packer, an YB55A Cellophaner, an YB65A Cartoner and an

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp...

Brand Name:SAIKELI

Model Number:MJE3055T

Place of Origin:China

...Silicon Plastic Power Transistors Description 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor...

Brand Name:ORK

Model Number:Customized

Place of Origin:China

Rubber Packer Cups Custom Molded Rubber Ring Seals Silicone Rubber Stopper Plug Description of the sealing ring Material: NBR, CR, SBR, PU, EPDM, IIR, HNBR, ACM, ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

.... These transistors are specially designed for providing high power and high frequency performance. Their main advantages include their reliability and stability, which is based on the national military standard production line. Silicon Carbide MOSFETs are

Brand Name:Infineon Technologies

Model Number:IRF3205PBF

Place of Origin:Original

... Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area...

Brand Name:Huixin

Model Number:S8550 SOT-89

Place of Origin:China

S8550 SOT-89 0.5A PNP Silicon Epitaxial Planar Transistor S8550 SOT-89 0.5A SMD Transistor PNP Silicon Epitaxial Planar Transistor S8550 SOT-89 Datasheet.pdf FEATURES For switching and amplifier applications. Especially suitable for AF-driver stages and ...

Categories:RF Transistors

Country/Region:china

MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in ...

Brand Name:Ruideer

Model Number:Customizable

Place of Origin:China

Silicon Carbide as a Semiconductor Semiconductor Transistors And MOSFETs Produced By Silicon Carbide Sintering Furnace Nearly every electronic item you encounter on a day-to-day basis contains semiconductors. They are found in everything from your ...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF571

... plastic packages. This Motorola series of small–signal plastic transistors offers superior quality and performance at low cost. . Applications: • High Gain–Bandwidth Product fT = 8.0 GHz (Typ) @ 50 ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:A42

SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage ...

Brand Name:VISHAY

Model Number:3DU5C

Place of Origin:Original Factory

880nM 2 PINS 3DU5C NPN Silicon Phototransistor with Metal Encapsulated Features :  NPN Silicon Phototransistor;  Model : 3DU5C  Working Voltage(Max.) : 10V;  Reverse Breakdown Voltage : 15V;  Dark Current : 0.3uA  Photocurrent : 0.5-1mA;  Power ...

Brand Name:Original Factory

Model Number:DF17MR12W1M1HFB68BPSA1

Place of Origin:CN

..., 1200 V 45A (Tj) 20mW, Chassis Mount. Specification Of DF17MR12W1M1HFB68BPSA1 Part Number: DF17MR12W1M1HFB68BPSA1 Technology: SiC (Silicon Carbide Junction Transistor) Drain To Source Voltage (Vdss): 1200V Vgs(Th) (Max) @ Id: 5.15V @ 20mA Power -