high energy chip varistor 05d 271

Brand Name:XIWUER

Model Number:SMD MYG3-7K385(MYD- 7D621)

Place of Origin:XIAN, CHINA

...drive power, DOB, ACLED, etc. Its appearance is in the shape of a button, which is convenient and suitable for applications in small spaces. It is produced by automated machines, has high production capacity, competitive prices, many certifications, and is

Brand Name:OEM

Model Number:14D471K

Place of Origin:China

...: -40℃ ~ +85℃ 5. Insulation resistance ≥500 MEgohms 6. Pressure-sensitive voltage temperature coefficient: -0.5%/℃ 7. Chip diameter: 5, 7, 10, 14, 20, 25, 32, 40, 50mm 8. The allowable deviation of voltage sensitive voltage is K±10%, L±15%

Brand Name:JYVDR

Model Number:JYVDR7D561K

Place of Origin:Guangdong,China

... devices with non-linear voltage-current characteristics (bi-directional) similar to back- to-back zener diodes. They have the added advantage of greater current and energy handling capabilities as well as EMI/RFI attenuation. The

Brand Name:UCHI

Model Number:TMOV

Place of Origin:Dongguan China

...varistor High Energy Industrial Thermally Protected Description The over temperature protection type varistor is a series of varistors with over temperature release (disconnection) function. It is a temperature sensitive device attached to a regular MOV chip...

Brand Name:Tianrui

Model Number:Varistor

Place of Origin:China

...05D 07D 10D 14D 20D 25D 32D 40D Clamping voltage Radial lead varistor Metal oxide Zinc oxide Varistor for generator Operating Temperature -40℃ to +85℃ Solder ability 10% Voltage 18V-1100V or more Temp. Coefficient -0.5 percent Similar Thermistor,temperature sensor etc. Photos Features The MOV-40D Series of 40mm high Energy Metal Oxide Varistors “D” & “S” Series The High Energy Series large tab-leaded varistors...

Model Number:MVR1210-431G

Place of Origin:CHINA

... (TVS) which manufactured from semicon ductingceramics by the highly advanced multilayer formation technologies, which can offer rugged protection, excellent transient energy absorption and internal heat dissipation. The devices are leadless chip form,