high power rf mosfet transistor

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:PTFA18100

... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / ...

Brand Name:Kimpok Technology / OEM

Model Number:KP-LAM800-50W

Place of Origin:China

500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA...

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Brand Name:UM AUDIO

Model Number:UM3001

Place of Origin:China

... strap for easy carrying AUDIO-Specification Model: UM3001 (Basic) Main Material: ABS Product Dimension: Ø230 x L350mm Power: Max 50W Power Supply: 8x C(or

Brand Name:Wolvesteam

Model Number:WT700227

Place of Origin:USA

...High Power RF Signal Jammer Portable Cell Phone Signal Vehicle Bomb Jammer Product description : This device is not only bomb jammers, but also high power portable DDS convoy jamming system, portable RF jammer,portable vehicle bomb jammer. This jammer can implementing the most effective and reliable RF jamming technology and equipped with a fully-integrated broadband jamming system. It can cove all RF...

Categories:Leaky Cable

Country/Region:china

...High Power RF Termination rf termination 50 ohm sma termination 50 ohm 50 ohm rf load termination Product Features Mainly used for matching networks in radio frequency and microwave system; Wide working band, low VSWR, and excellent anti-impulse and anti-burning performance with high power design; High...

Categories:RF Termination Load

Country/Region:china

.... Specifications: Input Power(W) 75 100 RF Connector DIN-M DIN-F 4.3-10 M 4.3-10 F N-M N-F Frequency Range(MHz) 600-4000 VSWR ≤ 1.25 PIM3 (dBc@2*43dBm) ≤ -...

Brand Name:Bochuangshikong

Model Number:BCSK-LG006

Place of Origin:shenzhen

...high power RF GSM 3G UAV jammer 1500m drive off forced landing UAV jammer High Power Draw Bar Box 6 Channels Mobile Signal Jammer 300W up to 1500 meters is the latest professional signal jammer of high power.This type of frequncies is sepcially suitable for cell phone signals and RF frequencies. Built-in high...

Brand Name:ZMSH

Model Number:Silicon carbide wafer

Place of Origin:China

2inch 4inch 6inch 8inch 3C-N SiC Wafer Silicon Carbide Optoelectronic High-Power RF LEDS Description of 3C-N SiC Wafer: Compared to 4H-Sic, although the bandgap of 3C silicon carbide (3C SiC) is lower, its ...

Brand Name:TX TELSIG

Model Number:TX-JZ01

Place of Origin:China

... coverage, 2000-3000meter Shield channels/signals: WIFI 2.4G, WIFI 5.8G, GPSL1 (modified or added ) Output power: 190W (Max 650W ) Antenna: 4 directional antenna Case: IP65 waterproof level die cast aluminum alloy Network ...

Brand Name:Nubway

Model Number:NBW-FII

Place of Origin:Beijing, China

High power RF tube CO2 fractional laser vaginal tightening skin resurfacing beauty machine How Fractional Skin Resurfacing Works Fractional ...

Place of Origin:Jiangsu, China

Brand Name:SZHUASHI

Model Number:YP3630W

SZHUASHI 100% New Black YP3630W Three-Stage High Dynamic Range Gain Power Amplifier PA Optimized for 1.4-3.5GHz Product Description The YP3630W is a three-stage, high dynamic range broadband power driver amplifier using an advanced InGaP/GaAs HBT process...

Brand Name:original

Model Number:MRF9045LR1

Place of Origin:original

...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Category: RF MOSFET Transistors RoHS: Details Transistor...

Brand Name:ST

Model Number:TIP122

Place of Origin:Original Factory

MOSFET Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high...

Brand Name:Original Factory

Model Number:IPL60R225CFD7AUMA1

Place of Origin:China

...MOSFET Transistor FET Good Price Product Description IPL60R225CFD7AUMA1 offers a cost-optimized, 10mΩ low on-resistance RDS(on), enabling increased power density and minimized conduction losses. Features Of IPL60R225CFD7AUMA1 Highest efficiency with outstanding ease-of-use 1 performance tradeoff Enabling increased power...

Brand Name:OEM

Place of Origin:China

...40W 50W High Power RF Anti Drone Modules Incorporate State of The Art GaN for Autel Mavic 3 Fpv C-Uas GaN transistors are more efficient. The efficiency minus the driver (heating power consumption) is about 55-65%. In fact, the working ...

Brand Name:HT

Model Number:F16N65L TO-220F-3L

Place of Origin:China

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

Brand Name:TOP

Model Number:TOP-BNC-C01

Place of Origin:Shen Zhen,Guang Dong,China

High Power Wireless Low Loss RF Coaxial Cable 50 OHM High Voltage andnbsp; andnbsp; Cable introduction: Using BNC connector at one side of the rf cable, another side connected with any other rf connectors such as BNC,SMA,N type IPEX, U.FL etc, The cable also be made as different type: RG316,RG174, RG178, 1.13 etc. The cable length is from 5cm to 2M depends on customersandrsquo; request. andnbsp; Available coax types coaxial RF...

Place of Origin:Beijing,China

Brand Name:forimi

Model Number:FMN-1

...high power face lifting fractional rf microneedle machine for face rejuv Quick data about our micro-needle rf machine: Model FMN-I Frequency 5MHZ Total RF Treatment Leval 1-10 Power 80W Type of needles 81 tips, 49tips, 25tips Depth of Needle 0.3-3mm(Adjustable) Switch Foot Switch Dimension(CM) 30*34*35 Weight 6kg Advantages of our microneedle fractional rf skin lifting machine: 1 minimal invasive fractional RF...