high sensitivity pin field effect transistor

Brand Name:Liocrebif

Model Number:LKF-PINFET

Place of Origin:China

Essential details MOQ:1 Specification Number:LKF-PINFET Product Introduction Product Introduction As the optical information receiver of optical receiver system, PINFET (P-Intrinsic-N Field-Effect Transistor) acts as voltage amplified optoelectronic ...

Brand Name:OTOMO

Suitable for high frequency switching power supply 20A 200V Schottky Barrier Diode HBR20200 TO-220C TO-220HF TO-263 APPLICATIONS  High frequency switch power supply  Free wheeling diodes, polarity protection applications FEATURES Common cathode ...

Brand Name:Hua Xuan Yang

Model Number:4504P-B

Place of Origin:ShenZhen China

... Field Effect Transistor / High Frequency Mosfet Field Effect Transistor Feature 40V/250A R DS(ON) = m(typ.) @ V GS =10V 100% avalanche tested Reliableand Rugged Lead FreeandGreenDevicesAvailable (RoHSCompliant) Field Effect Transistor Applications...

Brand Name:ANTERWELL

Model Number:2SK3797

Place of Origin:Malaysia

IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer 2SK3797 Field Effect Transistor Silicon N-Channel MOS Type Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) • High forward transfer ...

Brand Name:Infineon Technologies IR

Model Number:IRFS3207ZTRRPBF

... MOSFET MOSFT 75V 170A 4.1mOhm 120nC App Characteristics Features High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and

Brand Name:Original

Model Number:LP3407LT1G

... Body Model: > 4000 V− Machine Model: > 400 V 3. Moisture Sensitivity Level: 1 4. MOS (Field Effect Transistor) / LP3407LT1G Diodes and Rectifiers P channel 30V 4.1A Customer Service: 1. Do you support BOM lists? Of course, we have a professional team to

Brand Name:TOSHIBA

Model Number:TK13A60D

Place of Origin:Original

...Field Effect Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high...

Place of Origin:MALAYSIA

Brand Name:MOT

Model Number:MRF21090

MRF21090 is a RF Power Field Effect Transistor. Part NO: MRF21090 Brand: MOT Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely...

Place of Origin:China

Brand Name:ONSEMI

Model Number:2N7002T

High Power MOSFET 2N7002T N-Channel Enhancement Mode Field Effect Transistor 60V, 115mA, 2Ω [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor...

Model Number:NDS9952A

Place of Origin:original factory

...'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.

Brand Name:Lingxun

Model Number:LC60R280F

Place of Origin:China

...Field-Effect Transistors N-channel Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high...

Brand Name:Julun

Model Number:PG-TO 220

Place of Origin:CHINA

...Transistor IPA80R1K4CE Field Effect Transistor Description CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level. CoolMOS™ 800V CE comes with selected package choice offering the benefit of reduced system costs and higher power density designs. Features • High...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...: Silicon Carbide Metal-Oxide-Semiconductor Field Effect Transistor (SiC MOSFET) is a high power, low on resistance, high frequency device with excellent switching performance. It is widely used in Solar Inverter, High-voltage DC/DC Converter, Motor ...

Brand Name:onsemi

Model Number:BSS84LT1G

Place of Origin:original

BSS84LT1G MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Field Effect Transistor High Performance FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50 V Current - Continuous ...

Place of Origin:US

Brand Name:Original

Model Number:2SK1489

High power NPN epitaxial planar transistor 2SD669A Product Description Model Number 2SD669A Package TO-3P Date Code 18+ Packing Tape and reel/ Tube Stock Enough Stock Supplier Quanyuantong Electronics Co.,ltd Lead time 48hours Quality Warranty 360 days ...

Place of Origin:Guangdong, China

Brand Name:Original

Model Number:PTA20N50A

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Place of Origin:original

Brand Name:original

Model Number:BSS138LT1G

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Model Number:SS360PT

Place of Origin:USA

...Digi Hall-Effect IC High Sensitivity The SS360PT, SS460P and SS460P-T2 High Sensitivity Latching Hall-effect Sensor ICs with Built-in Pull-up Resistors are small, sensitive, and versatile devices that are operated by the magnetic field from a permanent ...

Brand Name:SG

Model Number:Hall Effect Current Sensor

Place of Origin:Dongguan China

... effect. This phenomenon was discovered by Hall (A.H.Hall, 1855-1938) in 1879 when he was studying the conductive mechanism of metals. Later, it was found that semiconductors and conductive fluids also have this effect, and the Hall effect of

Brand Name:ON

Model Number:NDT3055L

Place of Origin:CHIAN

...produced using onsemi’s proprietary, high cell density,DMOS technology. This very high density process is especiallytailored to minimize on−state resistance and provide superiorswitching performance, and withstand high energy pulse in theavalanche and