high vgs mosfet to 220ab

Brand Name:IOR

Model Number:IRFB5615PBF

Place of Origin:CHINA

...MOSFET 150V 35A (Tc) 144W (Tc) Through Hole TO-220AB FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 39mOhm @ 21A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs...

Brand Name:Infineon Technologies

Model Number:IRFB7540PBF

Place of Origin:Mult-origin

...MOSFET Description: This MOSFET is a high-voltage, high-current, and low-on-resistance device for power control applications. It is suitable for switching applications up to 75V, as well as for high-current motor control, DC-DC converters, and other power management applications. Parameters: Vds (Max): 75V Rds (on): 0.012 ohm Id (Max): 120A Package: TO-220AB Type: N-channel Polarity: Enhancement Vgs (Max): ±20V Vgs

Brand Name:Hua Xuan Yang

Model Number:AP8810TS

Place of Origin:ShenZhen China

...Mosfet Power Switch / AP8810TS High Current Mosfet Switch General Description: Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. General Features VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDN327N

High Power MOSFET FDN327N N-Channel 1.8 Vgs Specified PowerTrench® MOSFET 20V, 2A, 70mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

...high power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112 at VGS = - 4.5 V - 3.1 3.3 nC 0.142 at VGS...

Brand Name:Infineon

Model Number:IRLR7843TRPBF

Place of Origin:Original Factory

Transistor IRLR7843TRPBF TO-252 30V 161A Power MOSFET for Telecom and Industrial Use IRLR7843PbF IRLU7843PbF Description Power MOSFET Selection for Non-Isolated DC/DC Converters Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-Source Voltage 30...

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

...MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R DS(ON) and C rss .In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

...high power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112 at VGS = - 4.5 V - 3.1 3.3 nC 0.142 at VGS...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low Power Loss Trench Process MOSFET with High EAS Capability and Smaller RSP *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, ...

Place of Origin:US

Brand Name:Original

Model Number:IRF840

Product Detail Manufacturer Vishay Siliconix Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V ...

Brand Name:Infineon Technologies

Model Number:IRFB7434PBF

Place of Origin:United States

...220AB Features: Category Single FETs, MOSFETs Mfr Infineon Technologies Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs...

Categories:RF Transistors

Country/Region:china

...220AB RF Transistors Manufacturer: Infineon Product Category: MOSFETs RoHS: - REACH - SVHC: - Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 75 V Id - Continuous Drain Current: 130 A Rds On - Drain-Source Resistance: 7.8 mOhms Vgs...

Brand Name:Original brand

Model Number:IRFB38N20DPBF

Place of Origin:Original Manufacturer

...MOSFET POWER TRANSISTOR IRFB38N20DPBF N- CHANNEL SMPS MOSFET FET Type: N-Channel Drain To Source Voltage: 200V Current - Continuous Drain: 43A Drive Voltage: 10V High Light: high power mosfet transistors , n channel mosfet transistor IRFB38N20DPBF N-Channel 200V 43A 3.8W 300W Through Hole TO-220AB SMPS MOSFET Applications l High...

Brand Name:DELI

Model Number:AOTF14N50

Place of Origin:Original

Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id...

Brand Name:Original Factory

Model Number:IPQC60R017S7XTMA1

Place of Origin:CN

... Of IPQC60R017S7XTMA1 Part Number IPQC60R017S7XTMA1 Rds On (Max) @ Id, Vgs 17mOhm @ 29A, 12V Vgs(th) (Max) @ Id 4.5V @ 1.89mA Gate Charge (Qg) (Max) @ Vgs 196 nC @ 12 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7370 pF @ 300 V

Brand Name:Infineon

Model Number:IPP65R190CFD7XKSA1

Place of Origin:Germany

...MOSFET HIGH POWER NEW TO-220-3 IPP65R190CFD7 IPP65R190CFD Manufacturer: Infineon Product Category: MOSFET Technology: Si Installation style: Through Hole Package/Box: TO-220-3 Transistor polarity: N-Channel Number of channels: 1 Channel Vds-drain-source breakdown voltage: 650 V Id-continuous drain current: 12 A Rds On-drain-source on-resistance: 190 mOhms Vgs - gate-source voltage: - 20 V, + 20 V Vgs...

Place of Origin:/

Brand Name:ST

Model Number:STB70NF03LT4

...MOSFET STB70NF03LT4 ST TO-263 New and Original APPLICATIONS SPECIFICALLYDESIGNED AND OPTIMISEDFOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS ​ FET Type MOSFET N-Channel, Metal Oxide FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 70A (Tc) Rds On (Max) @ Id, Vgs 9.5 mOhm @ 35A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) @ Vgs...

Brand Name:Toshiba

Model Number:SSM3K361R,LF

Place of Origin:China

...MOSFET with Ultra-Low 40mandOmega; RDS(on) SOT-23 Package High Power Density Superior Efficiency Fast Switching and Logic Level Control for Compact Designs andnbsp; Featuresandnbsp; AEC-Q101 qualified (Please see the orderable part number list) 175℃ MOSFET 4.5 V drive Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS...

Brand Name:HT

Model Number:D7N65 TO-252W

Place of Origin:China

...MOSFET DESCRIPTION The D7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. Features • RDS(ON) ≤ 1.3 Ω @ VGS...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

...MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High...