igbt insulated gate bipolar transistor

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage...

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

Place of Origin:N/S

IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating ...

Brand Name:KRUNTER

Model Number:KUP40H12R4-7M

Place of Origin:CHINA

...Gate Bipolar Transistor Assembly The Ultimate Solution for Power Management Product Description: The Insulated Gate Bipolar Transistor Module, commonly known as IGBT Module, is a crucial component in electronic circuits, offering efficient power control and switching capabilities. This versatile module combines the features of an Insulated Gate Transistor...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... excellent combination of low conduction losses, high switching frequency, high reliability, and high current density. High Power IGBT has a current density of 400A/cm2 and an application frequency of 60KHz. It also has a number of advantages, such as its

Brand Name:ST

Model Number:STGW80H65DFB

Place of Origin:Original

... Insulated Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors ...

Brand Name:General Electric

Model Number:DS200IIBDG1AEA

Place of Origin:United States

... that provide a status of the processing of the board. The LEDs are visible from the interior of the circuit board cabinet and are red in color when lit. The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A has several connectors and when you

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ...

Model Number:MGW12N120D

Place of Origin:original factory

... Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for

Brand Name:TOSHIBA

Model Number:GT20J301

Place of Origin:JAPAN

GT20J301 : N Channel ( High Power Switching Motor Control Applications ) Toshiba Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ●The 3rd Generation ●Enhancement-Mode ●High...

Brand Name:Anterwell

Model Number:GP4068D

Place of Origin:original factory

IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C ...

Brand Name:Lite-On Inc.

Model Number:LTV-356T-D

Place of Origin:original

...Insulated Gate Bipolar Transistor (IGBT) Driver Product: LTV-356T-D Power Isolator IC Features: • Maximum working voltage: 50V • Maximum output current: 1.5A • Operating temperature range: -40°C to +85°C • Lead-free and RoHS compliant • Low power consumption • High efficiency • Low EMI • High temperature stability • High reliability and long term durability • Excellent electrical insulation...

Place of Origin:Original

Brand Name:Microsemi Corporation

Model Number:APT50GT60BRDQ2G

...IGBT Power Module Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 110A Current - Collector Pulsed (Icm) 150A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A Power - Max 446W Switching Energy 995µJ (on), 1070µJ (off) Input Type Standard Gate...

Brand Name:Infineon Technologies

Model Number:IKWH50N65WR6XKSA1

IKWH50N65WR6XKSA1 IGBT Transistors HOME APPLIANCES 14 Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs are optimized for full-rated hard switching turn off typically found in welding ...

Brand Name:GE

Model Number:DS200IPCSG2A

Place of Origin:USA

DS200IPCSG2A GE Insulated Gate Bipolar Transistor P3 Snubeer Board DIN-rail Mounting Turbine Control System Series Product Details: Brand Name GE Model DS200IPCSG2A Condition ...

Brand Name:ABB

Model Number:FS450R17KE3/AGDR-71C S

Place of Origin:SWEDEN

Product Description ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and protection system *Real-time information management and optimization system *...

Categories:IGBT Modules

Country/Region:china

IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227

Brand Name:ZFeng

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Brand Name:ON

Model Number:MMBT5551LT1G

Place of Origin:ON

... IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ...

Place of Origin:Japan

Brand Name:FUJITSU

Model Number:2DI30M-050

...BIPOLAR TRANSISTOR MODULES Rating and Specifications . Part NO: 2DI30M-050 Brand: FUJITSU Mounting Type: Screws Date Code: 04+ Quality Warranty: 3 Months 　 　 Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT...

Brand Name:Original Factory

Model Number:AFGHL40T65SPD

Place of Origin:CN

...IGBT Trench Field Stop Transistors TO-247-3​ Product Description Of AFGHL40T65SPD AFGHL40T65SPD IGBT Trench Field Stop Transistors - 238W Single IGBTs Transistors, package is TO-247-3​, Transient Gate−To−Emitter Voltage is ±30V. Specification Of AFGHL40T65SPD Part Number: AFGHL40T65SPD Vce(On) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Thermal Resistance Junction−To−Ambient: 40°C/W Gate...