igbt power transistor 80a

Brand Name:onsemi

Model Number:SGL160N60UFD

Place of Origin:Original Factory

IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A...

Brand Name:Fairchild/ON

Model Number:FGH60N60SMD

Place of Origin:CN

... Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology,

Brand Name:onsemi

Model Number:NGTB40N120SWG

...Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 us Short Circuit Capability These are Pb−Free Devices Basic Data Product Attribute Attribute Value Manufacturer: onsemi Product Category: IGBT Transistors...

Brand Name:Lingxun

Place of Origin:China

...Power Transistor IGBT For High-Power Electronic Controls Product Description: The High-Power IGBT is packaged in a TO-247 package type, which is ideal for high-power applications. It has a voltage rating of 650V-1200V and can operate at an application frequency of 20KHz-60KHz, making it suitable for various applications. One of the key features of the High-Power IGBT...

Brand Name:IXYS

Model Number:IXYK110N120A4

... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The

Brand Name:Original Factory

Model Number:AFGHL50T65SQD

Place of Origin:CN

...IGBT Transistors 80A Trench Field Stop​ Product Description Of AFGHL50T65SQD AFGHL50T65SQD is 268W IGBT Trench Field Stop, 650V, 80A Single IGBTs Transistors, Through Hole, package is TO-247-3. Specification Of AFGHL50T65SQD Part Number: AFGHL50T65SQD Collector−To−Emitter Voltage: 650V Gate−To−Emitter Voltage: ±20V Transient Gate−To−Emitter Voltage: ±30V Collector Current @ TC = 25°C: 80A...

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor Applications Switching Application Power...

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor Applications Switching Application Power...

Brand Name:Infineon Technologies

Model Number:IKW50N60H3

Place of Origin:original

...Max. Collector Current (Icm): 80A • Gate Emitter Voltage (VGE): ±20V • Collector Emitter Saturation Voltage (Vce(sat)): 2.1V@25A • Operating Frequency (f): up to ...

Brand Name:ON

Model Number:MMBT5551LT1G

Place of Origin:ON

... IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ...

Place of Origin:Japan

Brand Name:FUJITSU

Model Number:2DI50D-055A

... conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power conditioning, frequency conversion equipment, motor speed,

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:

Brand Name:ONSEMI

Model Number:BD135

Place of Origin:Original

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ...

Brand Name:Fanuc

Model Number:1MBI400NA-120

Place of Origin:Japan

New Module 1MBI400NA-120 FUJI Module Original IGBT Power Module Part Category: Transistors Manufacturer: Fuji Electric Corp. of America Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channe fuji a50l-0001-0327, a50l-0001-0327 ...

Brand Name:KRUNTER

Model Number:KWG600H12N4B

Place of Origin:CHINA

...functionality of an Isolated Gate Thyristor Module (IGT) and an Insulated Gate Transistor Block (IGT) into a single integrated device. This innovative module offers unparalleled performance and efficiency in a wide range of power electronics applications.

Place of Origin:US

Brand Name:Original

Model Number:IHW20N120R3FKSA1

... (Ic) (Max) 40A Current - Collector Pulsed (Icm) 60A Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A Power - Max 310W Switching Energy 950µJ (off) Input Type Standard Gate Charge 211nC Td (on

Brand Name:STARPOWER

Model Number:GD150HFL120C2S

Place of Origin:China

...IGBT POWER Module GD150HFL120C2S GD200HFL120C8S Molding Type Module Molding Type Module 1200V/200A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) SPT+ IGBT...

Brand Name:FUJI

Model Number:2MBI100N-060

Place of Origin:JAPAN

...IGBT Power Module 2-PACK IGBT 600V 100A IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function ( ~3 Times Rated Current) n n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply Description 1. IGBT...

Brand Name:first class

Model Number:medium frequency

Place of Origin:china

...of power consumption higher than thyristor serial-connected one because it rejects current-limiting inductor inside thyristor-inverting melting furnace. Compared with thyristor, IGBT transistor can not only control conduction, but also control its turn-off