igbt transistor module mosfet

Place of Origin:CN

Brand Name:Original Factory

Model Number:F3L11MR12W2M1HPB19

Automotive IGBT Modules F3L11MR12W2M1HPB19 MOSFET Low Power IGBT Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...

Brand Name:IXYS

Model Number:IXBT14N300HV

... of MOSFETs and IGBTs. These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both its saturation voltage and the forward voltage drop of its ...

Brand Name:SIEMENS

Model Number:6SY7000-0AC37

... S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V Descripition Part Number 6SY7000-0AE73 Manufacturer / Brand SIEMENS Category Discrete Semiconductor Products > Transistors - IGBTs - Modules Description IGBT Modules Description IC FLASH 64GBIT...

Brand Name:Eupec

Model Number:FS150R12KE3

Place of Origin:Germany

...IGBT Transistors Module FS150R12KE3 or FS15OR12KE3 FS150R12KE3 Product Description Brand: Eupec Model: FS150R12KE3 Alternate Model: FS15OR12KE3 Control way: unidirectional Pole number: two pole Package Material :Metal Package Package Outline: Flat Shape Shutdown speed: ordinary Cooling function: heat sink Description: EconoPACK ™ 3 1200V sixpack IGBT module...

Brand Name:KRUNTER

Model Number:KWG600H12N4B

Place of Origin:CHINA

...speed switching capability of a power transistor with the efficiency of a MOSFET. This module features an Insulated Gate Bipolar Transistor (IGBT) element, which allows for efficient power control and management in a wide range of applications. Designed to

Place of Origin:Original

Brand Name:Infineon Technologies

Model Number:IRG4BC30UDPBF

IRG4BC30UDPBF IGBT Power Module Transistors IGBTs Single IRG4BC30UDPBF Specifications Part Status Active IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 23A Current - Collector Pulsed (...

Brand Name:Infineon Technologies

Model Number:IPB044N15N5ATMA1

Place of Origin:Germany

... Attribute Value Search Similar Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: TO-263-7 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 150 V Id -

Brand Name:INFINEON

Model Number:FF450R12KT4

Place of Origin:Original

... module designed to meet the demanding requirements of modern electronic systems. With its advanced features and reliable performance, this module offers exceptional power handling capabilities and efficient operation. Features 1:High Power Handling: The

Place of Origin:PHILIPPINE

Brand Name: Technologies AG

Model Number:SPW47N60C3

...Transistor Description: The SPW47N60C3 is a Cool MOS Power Transistor. Applications: • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances Specifications: Datasheets SPW47N60C3 Product Photos TO-247 Pkg Product Training Modules CoolMOS™ CP High Voltage MOSFETs...

Brand Name:Infineon Technologies

Model Number:IRG4PC40UDPBF

Place of Origin:original

...IGBT Power Module High Quality High Efficiency Low Loss Operation IRG4PC40UDPBF IGBT Power Module The IRG4PC40UDPBF IGBT power module from Infineon is a high voltage (HV) insulated gate bipolar transistor (IGBT) module. It is designed for high power applications, including motor control, welding, lighting and renewable energy systems. The module...

Brand Name:ONSEMI

Model Number:MGP20N40CL

Place of Origin:Original

MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT switching power mosfet low power mosfet This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from ...

Brand Name:GINRI

Model Number:JR-XJ

Place of Origin:China

... automation equipment must produce more than 200 products in one minute. This speed must be achieved, or it cannot meet the requirements. Transistor output, this is the saying in circuit control. In many automation devices, the circuit ultimately needs to

Brand Name:Power Integrations

Model Number:2SC0435T2G1-17

Place of Origin:TH

Dua Channel IGBT Driver SCALETM-2+IGBT and MOSFET Driver Core Q1. What is your terms of packing? A: Generally, we pack our goods in neutral white boxes and brown cartons. If you have legally registered patent, we can pack the goods in your branded boxes...

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ...

Brand Name:IRF

Model Number:IRF7329

Place of Origin:Thailand

... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well

Place of Origin:US

Brand Name:Original

Model Number:IHW30N135R3FKSA1

Product Detail Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer Infineon Technologies Series TrenchStop® Packaging Tube Part Status Obsolete IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1350V Current - ...

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: ...

Brand Name:Hua Xuan Yang

Model Number:12N60

Place of Origin:ShenZhen China

...Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode N Channel Mosfet Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. N Channel Mosfet

Brand Name:STARPOWER

Model Number:GD150HFL120C2S

Place of Origin:China

...IGBT POWER Module GD150HFL120C2S GD200HFL120C8S Molding Type Module Molding Type Module 1200V/200A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) SPT+ IGBT...

Brand Name:Fuji Electric

Model Number:6MBP50RA060-01

Place of Origin:JP

6MBP50RA060-01 IGBT Power Module IPM-N 600V 50A Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating ...