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All infineon optimos power mosfet wholesalers & infineon optimos power mosfet manufacturers come from members. We doesn't provide infineon optimos power mosfet products or service, please contact them directly and verify their companies info carefully.
| Total 190 products from infineon optimos power mosfet Manufactures & Suppliers |
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Brand Name:Infineon Model Number:BSC070N10NS3GATMA1 Place of Origin:Malaysia ..., high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). Potential Applications: ... |
Angel Technology Electronics Co
Hongkong |
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Brand Name:Infineon Technologies/International Rectifier IOR Model Number:IRLR3915TRPBF ... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are |
Guangzhou Topfast Technology Co., Ltd.
Guangdong |
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Brand Name:Infineon Model Number:IPB200N25N3 Place of Origin:CHINA ... Threshold Yes Automotive No PPAP No Product Category Power MOSFET Configuration Single Process Technology OptiMOS 3 Channel Mode Enhancement Channel Type N Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 250 Maximum Gate ... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:Infineon Model Number:IPD30N08S2L21ATMA1 Place of Origin:original IPD30N08S2L21ATMA1 MOSFET Power Electronics N-Channel OptiMOS® Power-Transistor Package TO-252-3 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75 V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive ... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Original Factory Model Number:IPD068N10N3GATMA1 Place of Origin:CN ...Power MOSFET Surface Mount Type 100V 90A Product Description Of IPD068N10N3GATMA1 IPD068N10N3GATMA1 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Product Attributes Of IPD068N10N3GATMA1 Part Number IPD068N10N3GATMA1 FET Type N-Channel Technology MOSFET... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:INFINEON Model Number:BSC220N20NSFD INFINEON Chip BSC220N20NSFD MOSFET N-CH 200V 52A TSON-8 Manufacturer: Infineon Product Category: MOSFET Packaging: Reel Brand: Infineon Technologies Product Type: MOSFET Subcategory: MOSFETs Company introduction: Hong Kong Interra Technology Co., Ltd. is ... |
HK INTERRA TECHNOLOGY LIMITED
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Brand Name:Infineon Technologies Model Number:IRF9530PBF Place of Origin:Original Infineon Pnp Power Transistor IRF9530PBF -100V -14A 200 MOhms 1 P-Channel 38.7 NC Applications Increased ruggedness Wide availability from distribution partners Industry standard qualification High performance in low frequency applications Standard pin-out allows for drop-in replacement High current capability Description -100V Single P-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:STMicroelectronics Model Number:IPB017N10N5 Product Range IPB017N10N5 Infineon Field Effect Transistor Semiconductors Power Mosfet Transistors MOSFET N-channel 600 V, 0.175 Ohm typ 18 A MDmesh DM2 Power MOSFET in D2PAK package App Characteristics Ideal for hot-swap and e-fuse applications Very low... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Brand Name:Infineon Technologies Model Number:SPA04N80C3 Place of Origin:China Infineon MOSFET N-Ch 800V 4A TO220FP-3 CoolMOS C3, Replacement for CoolMOS™ C3 is CoolMOS™ P7 800V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features: Low specific on-state resistance (RDS(on)*A) Very low energy storage in output capacitance (Eoss) @400V Low gate charge (Qg) Fieldproven CoolMOS™ quality CoolMOS™ technology has been manufactured by Infineon |
Shenzhen Hongxinwei Technology Co., Ltd
Guangdong |
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Brand Name:REASUNOS Place of Origin:Guangdong, CN ... based on the national military standard production line, this MOSFET is designed to meet the stringent requirements of military and industrial applications where performance and durability are paramount. As a device type MOSFET, this high power MOSFET is |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Brand Name:INFINEON Model Number:IRF3205PBF Place of Origin:Germany ...Power Mosfet 10A 55V 200W Field - effect tube inverter high - power Mosfet tube Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Brand Name:ONSEMI Model Number:NTF3055L108T1G Place of Origin:Original ... Circuits Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits STOCK LIST SN74LVC1G14DBVR 96000 TI 16+ SOT23-5 |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:HT Model Number:F4N65L TO-220F-3L Place of Origin:China ...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power |
Shenzhen Hunt Electronics Co., Ltd
Guangdong |
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Place of Origin:US Brand Name:Original Model Number:SPP20N60C3 Product Detail Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20.7A (Tc) Drive ... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Brand Name:IOR Model Number:IRFZ44NPBF Place of Origin:CHINA ...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:STMicroelectronics Model Number:STP100N8F6 Place of Origin:Shenzhen, China ...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Brand Name:Hua Xuan Yang Model Number:2N60 Place of Origin:ShenZhen China ...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:Infineon Model Number:BSM75GB120DN2 Place of Origin:Germany ... Off state voltage max: 600V Collector current: 75A Power: 625W Max. forward impulse current: 150A Case: AG-34MM-1 Electrical mounting: screw Mounting: screw Operating ... |
Guangzhou Sande Electric Co.,Ltd.
Hebei |
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Brand Name:IR Original Model Number:IR21094STRPBF Place of Origin:Original & New IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Model Number:IRF640NPBF Place of Origin:original factory ...HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free Description Fifth Generation HEXFET® Power MOSFETs from ... |
ChongMing Group (HK) Int'l Co., Ltd
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