infineon power mosfet

Brand Name:Infineon

Model Number:IRFP4368PbF

Place of Origin:CHINA

... Infineon Trans MOSFET N-CH Si 75V 350A 3-Pin(3+Tab) TO-247AC Tube Product Technical Specifications EU RoHS Compliant with Exemption ECCN (US) EAR99 Part Status Active SVHC Yes SVHC Exceeds Threshold Yes Automotive No PPAP No Product Category Power MOSFET ...

Brand Name:Infineon Technologies

Model Number:IPD530N15N3GATMA1

Place of Origin:Multi-origin

Infineon IPD530N15N3GATMA1 MOSFET Power Electronics Product Description: The Infineon IPD530N15N3GATMA1 is a high-performance power MOSFET, designed to provide superior performance in power electronics applications. This power MOSFET incorporates the ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRLR3915TRPBF

... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are

Brand Name:Infineon

Model Number:BSC070N10NS3GATMA1

Place of Origin:Malaysia

..., high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). Potential Applications: ...

Brand Name:IR

Model Number:F1405S

Place of Origin:CHINA

... Infineon IRF1405STRLPBF MOSFET Typical Applications Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are ...

Brand Name:STMicroelectronics

Model Number:IPB017N10N5

Product Range IPB017N10N5 Infineon Field Effect Transistor Semiconductors Power Mosfet Transistors MOSFET N-channel 600 V, 0.175 Ohm typ 18 A MDmesh DM2 Power MOSFET in D2PAK package App Characteristics Ideal for hot-swap and e-fuse applications Very low...

Brand Name:INFINEON

Model Number:IPW65R048CFDA

INFINEON Chip IPW65R048CFDA MOSFET N-CH 650V 63.3A TO247-3 Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... based on the national military standard production line, this MOSFET is designed to meet the stringent requirements of military and industrial applications where performance and durability are paramount. As a device type MOSFET, this high power MOSFET is

Brand Name:INFINEON

Model Number:IRF3205PBF

Place of Origin:Germany

...Power Mosfet 10A 55V 200W Field - effect tube inverter high - power Mosfet tube Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs...

Brand Name:ONSEMI

Model Number:NTF3055L108T1G

Place of Origin:Original

... Circuits Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits STOCK LIST SN74LVC1G14DBVR 96000 TI 16+ SOT23-5

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Place of Origin:US

Brand Name:Original

Model Number:SPP20N60C3

Product Detail Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20.7A (Tc) Drive ...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ...

Brand Name:IOR

Model Number:IRFZ44NPBF

Place of Origin:CHINA

...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Model Number:IRF640NPBF

Place of Origin:original factory

...HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free Description Fifth Generation HEXFET® Power MOSFETs from ...

Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power...

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ...